ZnO基三元合金半导体材料因其重要的带隙调制作用,已成为紫外探测器发展的一个重要方向,特别是Zn_(1-x)Mg_xO基紫外探测器,可以探测日盲区紫外光,更是受到了各国极大的关注.当前,Zn_(1-x)Mg_xO基紫外探测器大多采用MSM叉指结构,响应峰位于300nm附近,响应时间最高可达ns量级,紫外可见光抑制比亦可大于4个数量级.扼要介绍了国内外相关小组的研究进展,并着重分析了薄膜组分、结构以及探测器性能参数等.
ZnO-based ternary alloy semiconductors have been recognized as promising materials for UV detector due to their bandgap engineering. In particular,Zn_(1-x)Mg_xO-based ultraviolet detectors can detect ultraviolet light in the solar-blind region,so they are of great concern to many countries. At present,most detectors are of MSM interdigital structure,with the response peak around 300nm,response time reaching ns level,and UV-visible rejection ratio greater than four orders of magnitude. In this work,the recent advances in research on UV detectors based on ZnMgO films are introduced briefly and the property parameter such as film composition,structure,and device performance are discussed.
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