介绍了制备氧化锌薄膜的几种主要方法,包括磁控溅射法、化学气相沉积法、溶胶-凝胶法、激光脉冲沉积法等;分析了氧化锌薄膜作为代替透明导电膜(ITO膜)的可行性及这方面的研究进展;阐述了氧化锌薄膜作为一种新的场发射阴极材料应用于平板显示或作为场发射电子源的研究进展,同时综述了其作为发光器件的众多优势.
参考文献
| [1] | 应根裕.电子光学[M].北京:清华大学出版社,1985 |
| [2] | 傅竹西,林碧霞,郭常新,廖桂红.氧化锌半导体薄膜的发光光谱特性[J].半导体学报,1999(09):827. |
| [3] | 李世涛,乔学亮,陈建国.透明导电薄膜的研究现状及应用[J].激光与光电子学进展,2003(07):53-59. |
| [4] | 应春,沈杰,陈华仙,杨锡良,章壮健.ZnO：Al透明导电薄膜的研制[J].真空科学与技术,1998(02):125-129. |
| [5] | Shih W C;Wu M S .ZnO films on Gags substrates with a SiO2 buffer layer by RF planar magnetron sputtering for surface acoustic wave application[J].Journal of Crystal Growth,1994,137:319. |
| [6] | 杨田林,张德恒,李滋然,马洪磊,马瑾.射频磁控溅射制备的柔性衬底ZnO：Al透明导电薄膜的研究[J].太阳能学报,1999(02):200-203. |
| [7] | 施昌勇,沈克明.溅射电压和铝掺杂对透明导电氧化锌薄膜性能的影响[J].稀有金属,2000(02):154-156. |
| [8] | Sekiguchi T.;Inaba K.;Haga K. .ZnO films grown under the oxygen-rich condition[J].Journal of Crystal Growth,2000(0):68-71. |
| [9] | Tran N H;Hartmann A J;Lamb R N .Structural order of nanocrystalline ZnO film[J].Journal of Physical Chemistry B,1999,103:4264. |
| [10] | Koch M H;Hartmann A J;Lamb R N .Self-texture in the initial stages of ZnO film growth[J].Journal of Physical Chemistry B,1997,101:8231. |
| [11] | YI Lixin,XU Zheng,HOU Yanbing,ZHANG Xiqing,WANG Yongsheng,Xu Xurong.The ultraviolet and blue |
| [12] | Ohyama M.;Yoko T.;Kozuka H. .Sol-gel preparation of transparent and conductive aluminum-doped zinc oxide films with highly preferential crystal orientation[J].Journal of the American Ceramic Society,1998(6):1622-1632. |
| [13] | 周宏明,易丹青,余志明,肖来荣,李荐,王斌.溶胶-凝胶法制备的ZnO：Al薄膜的微观结构及光学、电学性能[J].金属学报,2006(05):505-510. |
| [14] | Nagase T;Ooie T;Sakakibara .A novel approach to prepare zinc oxide films:Excimer laser irradiation of sol-gel derived precursor films[J].Thin Solid Films,1999,357:151. |
| [15] | Bozlee BJ.;Exarhos GJ. .Preparation and characterization of gold and ruthenium colloids in thin zinc oxide films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(0):1-7. |
| [16] | 董伟伟,陶汝华,方晓东.脉冲激光沉积法制备ZnO基薄膜研究进展[J].量子电子学报,2006(01):1-9. |
| [17] | Kang H B;Nakamula K .Defect structure of epitaxial ZnO films on(0001)sapphire studied by transmission electron microscopy[J].Japanese Journal of Applied Physics,1997,36:L931. |
| [18] | 邱东江,吴惠桢,金进生,徐晓玲.不同衬底上低温生长的ZnO晶体薄膜的结构及光学性质比较[J].真空科学与技术学报,2001(01):5-8. |
| [19] | Groenen R.;van Lierop HRM.;Schram DC.;Kuypers AD.;van de Sanden MCM.;Linden JL. .An expanding thermal plasma for deposition of surface textured ZnO : Al with focus on thin film solar cell applications[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(1/2):40-43. |
| [20] | Sekiguchi T;Ohashi N;Terada Y .Effect of hydrogenation on ZnO luminescence[J].Japanese Journal of Applied Physics,1997,36:L289. |
| [21] | Bao G W;Li S F Y .Characterization of atomic foroe micros copy(AFM)tip shapes by scanning hydrothermally deposited Zno thin films[J].Talanta,1998,45:751. |
| [22] | Zafar S.;Morel DL.;Ferekides CS. .CHARACTERIZATION AND ANALYSIS OF ZNO-AL DEPOSITED BY REACTIVE MAGNETRON SPUTTERING[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1995(4):2177-2182. |
| [23] | Horwat D;Pierson J F .Towards a thin films electrochromic device using Nasicon electrolyte[J].Ionics,2008,14:227. |
| [24] | Qiao ZH;Agashe C;Mergel D .Dielectric modeling of transmittance spectra of thin ZnO : Al films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(2):520-525. |
| [25] | Keunbin Yim;Hyounwoo Kim et al.Effects of the O2/Ar gas flow ratio on the electrical and transmittance properties of ZnO:Al films deposited by RF magnetron sputtering[J].Electroceram,2006,17:875. |
| [26] | Cembrero J;Elmanouni A;Hartiti B et al.Nanocolumnar ZnO films for photovoltaic applications[J].Thin Solid Films,2004,451-452:198. |
| [27] | Konenkam R;Wbrd C R;Godinez M .Ultraviolet electrolu minescence from ZnO/polymer heterojunction light-emitting diodes[J].Nano Letters,2005,10(05):2005. |
| [28] | 薛增泉;吴全德.电子发射与电子能谱[M].北京:北京大学出版社,1993:80. |
| [29] | Choi Y S;Cho Y S;Kang J H et al.A field-emission displays with a self-focus cathode electrode[J].Applied Physics Letters,2003,82(20):3565. |
| [30] | Jeong S H;Hwang H Y;Lee K H et al.Template-based carbon nanotubes and their application to a field emitter[J].Applied Physics Letters,2001,78:2052. |
| [31] | Ahmed A. Al-Tabbakh;Mahendra A. More;Dilip S. Joag;Niranjan S. Ramgir;Imtiaz S. Mulla;Vijayamohanan K. Pillai .Energy analysis of field emitted electrons from a ZnO tetrapod[J].Applied physics letters,2007(16):162102-1-162102-3-0. |
| [32] | Zhang G M;Zbang Q F;Pei Y et al.Field emission from nonaligned zinc oxide nanowires[J].Vacuum,2005,77:53. |
| [33] | Jo SH;Banerjee D;Ren ZF .Field emission of zinc oxide nanowires grown on carbon cloth[J].Applied physics letters,2004(8):1407-1409. |
| [34] | Rogozin I V;Georgobiani A N .Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen[J].Inorganic Mater,2007,43:714. |
| [35] | Lu JG;Zhu LP;Ye ZZ;Zhuge F;Zhao BH;Ma DW;Wang L;Huang JY .Reproducibility and stability of N-Al codoped p-type ZnO thin films[J].Journal of Materials Science,2006(2):467-470. |
| [36] | Duan XY;Yao RH;Zhao YJ .The mechanism of Li, N dual-acceptor co-doped p-type ZnO[J].Applied physics, A. Materials science & processing,2008(3):467-472. |
| [37] | Kobayashi A;Snkey O F;Dow J D .Deep energy levels of defects in the wurtzite semiconductors AlN,CdS,Cdse,ZnS,ZnO[J].Physical Review B,1983,28:946. |
| [38] | Minegishi K;Koiwai Y .Growth of p-type zinc oxide films by chemical vapor deposition[J].Japanese Journal of Applied Physics,1997,36:1453. |
| [39] | JIANGNAN DAI;FENGYI JIANG;YONG PU .NH3-assisted growth approach for ZnO films by atmospheric pressure metal-organic chemical vapor deposition[J].Applied physics, A. Materials science & processing,2007(3):645-650. |
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