采用化学气相沉积方法,以Ni薄膜为催化剂,CH4、SiH4为反应气体,H2为载气,成功地在Si基片上生长出β-SiC晶须.运用X射线衍射和扫描电子显微镜系统地研究了不同催化剂厚度对SiC晶须形貌、结构和化学成分的影响.
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