采用溶胶-凝胶法合成Al掺杂ZnO胶体,通过浸涂法在石英衬底上制备不同退火温度的ZAO薄膜.通过XRD、FT-IR、IR-2型红外辐射仪等手段对薄膜进行表征并研究不同工艺条件对薄膜红外性能的影响.结果显示,Al的掺杂并未改变ZnO的晶型结构,薄膜材料具有沿(002)晶面趋向性生长的特点.ZAO薄膜在可见光区具有高透过率,平均透过率在80%左右,在红外波段具有较高的透过率,所得到的ZAO薄膜在红外波段具有较低的发射率.
Al-doped ZnO(ZAO)thin film was deposited on quartz glass by sol-gel process with different sintering temperatures. The infrared characters and the effect of technics were investigated through X-ray diffraction (XRD), FT-IR and IR-2 infrared actinograph. The XRD results show that the phase structure of ZAO thin films was the same as that of ZnO with highly C-axis oriented. The FT-IR results show that ZAO thin films had a high transparence ( about 80% ) for visible light and a high transparence for infrared.The ZAO thin films take a low infrared emissivity.
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