高功率脉冲磁控溅射是一种制备高质量薄膜的新兴方法.在相同的平均功率下分别采用HPPMS技术和传统DCMS技术在凹槽工件表面制备了钒薄膜.对比研究了两种方法下的等离子体组成、薄膜的晶体结构、表面形貌及膜层厚度的异同.结果表明:HPPMS产生的等离子体包括Ar(1+),v(0)和相当数量的v(1+);而DCMS放电时的等离子体包括Ar(1+),V(0)和极少量的v(1+).两种方法制备的凹槽不同位置处钒薄膜相结构的变化规律大致相似.HPPMS制备的钒薄膜表面致密、平整;而DCMS制备的膜层表面出现非常锐利的尖峰且高度很高,凹槽不同位置表面状态表现出较大差异.DCMS制备的钒薄膜截面表现为疏松的柱状晶结构;而HPPMS制备的膜层也具有轻微的柱状晶结构,但结构更为致密.HPPMS时的膜层厚度小于DCMS时的膜层厚度.与凹槽工件的上表面相比,DCMS时侧壁膜层的厚度为上表面的32％,底部膜层的厚度为上表面的55％.而HPPMS时侧壁的厚度为上表面的35％,底部膜层的厚度为上表面的69％.采用HPPMS方法在凹槽工件表面获得的膜层厚度整体上表现出更好的均匀性.
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