采用直流反应磁控溅射法,在Si(100)基片表面沉积厚度为1000 nm的二氧化钒膜.利用X射线衍射(XRD)仪和扫描电镜(SEM)分析膜的晶相和形貌,观察到二氧化钒膜的一种新的生长模式.X射线衍射分析表明生成的膜为典型的多晶二氧化钒膜,其(200)晶面衍射峰较强.扫描电镜(SEM)分析表明,随着膜厚的增加,膜表面晶粒增大,膜表面的晶粒呈现出独特的"纺锤"状或"棒"状;膜具有明显的 "柱"状生长特征,在膜厚380 nm以上时,"柱状"晶生长速率快速提高.样品的阻温特性分析表明,生成的二氧化钒膜具有典型的金属-半导体相变特征.
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