用改进的半导体材料生长中的液相外延设备测定了GaAs在Bi中溶解度。根据测定结果,获得了富Bi侧的Bi-GaAs二元平衡图。同时发现,在所研究的温度范围内相同的溶解时间内的溶解量与饱和溶解量之比与温度的关系也各不相同。这一现象似可认为是某些金属间溶解过程中的普遍特性。
A modified liquid phase epitaxy apparatus for semiconductor materialswas used to measure the solubility of GaAs in Bi. The solubility of GaAs in Biand two phase diagrams rich in Bi under H_2 and N_2 atmosphere were obtained. Anew phenomenon, in which the parameters Q value (quantity of GaAs dissolved inBi in fixed time but various temperatures/saturated quantity of GaAs in Bi) weredifferent from each other and there existed a maximum Q value in particular tem-perature, was observed. This phenomenon can be recognized as a common feature ofa simple binary metallic system which has the phase diagram similar to that of Bi-GaAs. The difference observed from the dependence of Q values on temperature inboth H_2 and N_2 atmosphere was discussed.
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