用透射电子显微术、表面化学分析等技术对两种SiC晶须的形态、内部缺陷、表面化学成分及其与晶须生长机制之间的联系进行了研究。在此基础上,提出了单晶百分比;直径与长度;内部与表面成分;缺陷类型及分布;生长结晶学特征等五个方面作为表征晶须显微结构的判据。
The morphology, crystal defects and chemical compositions of surfacesin two kinds of SiC whiskers related to their growth mechanism have been studiedby means of electron microscopy and surface chemical analysis. Based upon the expe-rimental results, five criteria for evaluating the whisker microstructure were sugge-sted as: proportion of the perfect single crystals, morphology and dimensions, defectsand their distribution, the bulk and surface chemistries, and crystallographic charac-ters.
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