目的 研究ZnO∶Si薄膜厚度对其生长速率、结晶度、光透率和电阻率的影响.方法 用直流磁控溅射系统在玻璃基片上沉积不同的时间,获得5个厚度不同的ZnO∶Si薄膜样品,对比研究了其薄膜生长取向和结构特性、微观形貌、电学参数及透过率曲线.结果 5个ZnO∶Si薄膜样品都为多晶膜,具有单一的(002)衍射峰,沿垂直于基片的c轴方向择优生长.当薄膜厚度从207.6 nm增加到436.1 nm时,薄膜的晶粒尺寸增大,晶化程度提高,电阻率变小;膜厚增至497.8 nm时,薄膜的晶化程度反而降低,电阻率增加.在可见光范围内,5个薄膜样品的平均透过率都高于91.7％.结论 膜厚对ZnO∶Si薄膜的电学性能有较大影响,对光学性能的影响则较小.
参考文献
| [1] | David S. Ginley;Clark Bright .Transparent Conducting Oxides[J].MRS bulletin,2000(8):15-18. |
| [2] | Elvira Fortunato;David Ginley;Hideo Hosono;David C. Paine .Transparent Conducting Oxides for Photovoltaics[J].MRS bulletin,2007(3):242-247. |
| [3] | Keh-moh Lin;Yu-Yu Chen .Improvement of electrical properties of sol-gel derived ZnO:Ga films by infrared heating method[J].Journal of Sol-Gel Science and Technology,2009(2):215-221. |
| [4] | IM H-J;HONG H-K;LEE J-A et al.Structural and Electrical Properties of A1 and B Co-doped ZnO Thin Films[J].Journal of Nanoelectronics and Optoelectronics,2011,6(03):301-305. |
| [5] | NATH R K;NATH S S .Sn-doped Zinc Oxide Thin Films for Methanol[J].Sensors & Transducers Journal,2009,108(09):168-179. |
| [6] | 刘汉法,张化福,袁玉珍,袁长坤,类成新.玻璃衬底和硅衬底沉积TZO透明导电薄膜的对比研究[J].太阳能学报,2011(04):486-489. |
| [7] | Ming-Chih Lin;Yao-Jen Chang .Characteristics of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition[J].Journal of the Electrochemical Society,2011(6):D395-D398. |
| [8] | A K Das;P Misra;L M Kukreja .Effect of Si doping on electrical and optical properties of ZnO thin films grown by sequential pulsed laser deposition[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2009(16):165405-7. |
| [9] | Clatot, J.;Campet, G.;Zeinert, A.;Labrugère, C.;Nistor, M.;Rougier, A. .Low temperature Si doped ZnO thin films for transparent conducting oxides[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2011(8):2357-2362. |
| [10] | 周磊,潘应君,徐超,彭骏松,张改璐.PCVD法制备Fe-6.5％Si高硅钢片的工艺研究[J].表面技术,2013(03):88-90. |
| [11] | 张艳茹,杭凌侠,郭峰,宁晓阳.直流反应磁控溅射制备a-C：H薄膜及其表面粗糙度研究[J].表面技术,2013(02):92-94,121. |
| [12] | Kim H.;Horwitz JS.;Kim WH.;Makinen AJ.;Kafafi ZH.;Chrisey DB. .Doped ZnO thin films as anode materials for organic light-emitting diodes[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):539-0. |
| [13] | 刘汉法,张化福,袁玉珍,袁长坤.掺钛氧化锌透明导电薄膜的制备及特性研究[J].半导体技术,2009(11):1092-1095. |
| [14] | 余旭浒,马瑾,计峰,王玉恒,张锡健,程传福,马洪磊.薄膜厚度对ZnO：Ga透明导电膜性能的影响[J].功能材料,2005(02):241-243. |
| [15] | M Devika;N Koteeswara Reddy;K Ramesh;K R Gunasekhar;E S R Gopal;K T Ramakrishna Reddy .Influence of annealing on physical properties of evaporated SnS films[J].Semiconductor Science and Technology,2006(8):1125-1131. |
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