采用离子束溅射技术,在低生长束流(4～10 mA)范围内,对低温(25～300 ℃)Si薄膜的晶化进行了研究.由Raman和XRD表征分析得出:在300℃采用6mA的生长束流,可在硅衬底上得到结晶性和完整性较好的Si外延薄膜;25℃时,在硅衬底上得到Si薄膜的多晶结构,实现了Si薄膜的低温晶化生长.
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