The spontaneous whisker growth phenomenon was investigated by exposing Sn3Nd intermetallic compound (IMC) to different environments. In a humid environment, tin whiskers grew rapidly; the incubation time for whisker formation was only 0.75 h. However, no whiskers were formed when Sn3Nd IMC was exposed to dry argon for 33 days or dry oxygen (DO) for 7 days. In situ observation of whisker growth during room ambient (RA) exposure gave an average whisker growth rate of the Sn3Nd IMC of about 11 angstrom/s, which are 2-3 orders of magnitude faster than that previously reported for tin plating. Following whisker growth, a new hydroxide compound, Nd (OH)(3), was found to have formed on the Sn3Nd. The results show that the presence of humidity in the exposure environment is necessary for whisker growth from Sn3Nd. Finally, the driving force for whisker growth is also discussed.
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