欢迎登录材料期刊网

材料期刊网

高级检索

大量研究结果和实验数据显示,铁电材料与器件具有极强的抗辐射能力,在军事和空间领域具有广阔的应用前景,因此铁电材料及其器件的抗辐射能力与机理研究日益受到关注.首先综述了国内外关于铁电材料的核辐射效应研究最新进展,在此基础上对其核辐射效应微观机理进行了分析和讨论,指出了铁电材料在抗辐射领域的发展趋势和研究方向.

参考文献

[1] 陈盘训.半导体器件和集成电路的辐射效应[M].北京:国防工业出版社,2005
[2] Philpy S C;Kamp D A;DeVilbiss A D et al.Adaptable ferroelectric memories for space applications[J].Non-Volatile Memory Technology Symposium,2004,15:149.
[3] Kamp D A;DeVilbiss A D;Haag G R et al.High density radiation hardened FeRAMs on a 130 nm CMOS/FRAM process[J].Non-Volatile Memory Technology Symposium,2005,16:4.
[4] Wang Zheyao;Liu Jianshe;Ren Tianling et al.Ba0.5 Sr0.5TiO3 ferroelectric thick films with uniform thickness and its applications to RF MEMS devices[J].Applications of Ferroelectrics ISAF IEEE,2002,28:475.
[5] Philpy S T;Kamp D A;Derbenwick G F.Nonvolatile and SDRAM ferroelectric memories for aerospace applications[A].,2004:2294.
[6] Goo R.Ferroelectric single crystal materials in optoelectronics and microwave photonic applications[A].,2004
[7] Liang Dong;Yue Ruifeng;Liu Litian .Monolithic dielectric BST infrared sensor arrays using a novel silicon-ferroelectric integration scheme based on improved porous silicon micromachining[J].Micro-Electro-Mechanical Systems,2004,17:576.
[8] Koontz S L;Boeder P A;Pankop C.The ionizing radiation environment on the international space station:performance vs.expectations for avionics and materials[A].,2005:110.
[9] Kinnison J D .IEEE nuclear and spaceradiation effects conference (NSREC) awards comments by the chairman[J].IEEE Transactions on Nuclear Science,2005,52(06):2095.
[10] Messenger S.R.;Burke E.A.;Summers G.P.;Walters R.J.;Warner J.H. .Criteria for identifying radiation resistant semiconductor materials[J].IEEE Transactions on Nuclear Science,2005(6):2276-2280.
[11] Schwank J.R.;Nasby R.D. .Total-dose radiation-induced degradation of thin film ferroelectric capacitors[J].IEEE Transactions on Nuclear Science,1990(6):1703-1712.
[12] Scott J E;Araujo C A;Brett H .Radiation effects on ferroelectric thin-film memories:retention failure mechanisms[J].Journal of Applied Physics,1989,66(05):1444.
[13] Coic Y.M.;Musseau O. .A study of radiation vulnerability of ferroelectric material and devices[J].IEEE Transactions on Nuclear Science,1994(3):495-502.
[14] Messenger G C;Coppage F N .Ferroelectric memories:A possible answer to the hardened Nonvolatile question[J].IEEE Transactions on Nuclear Science,1988,35(06):1461.
[15] Moore R.A.;Benedetto J.M. .Neutron irradiation effects on PZT thin films for nonvolatile-memory applications[J].IEEE Transactions on Nuclear Science,1991(6):1078-1082.
[16] Wrobel T F;Bullington J A et al.Radiation hardness of thin ferroelectric capacitors[J].Gomac Digest of Papers,1987,33(02):267.
[17] 高剑侠.SOI和铁电薄膜及器件的辐射效应研究[M].上海:中国科学院上海冶金研究院,1998:50.
[18] Scott J F;Zubko P .Electret effects in ferroelectric thin films[J].Electrets ISE International Symposium,2005,12:113.
[19] Song S P;Jacobs B;Ayres V M.Fundamental space radiation interactions in new nanoscale materials[J].Plasma Science ICOPS IEEE,2003(02):226.
[20] Sudalaimuthu S;Thomas M J.Effects of X-ray radiation on solid insulating materials[A].,2006:489.
[21] Hilczer B;Smogor H;Kutek J .Effect of fast electron irradiation on the dielectric and pyroelectric response of radiallyoriented PVDF film[J].Electrets ISE,2005,12:121.
[22] Joshi V;Ohno M;Ida J et al.Integrated silicon on insulator-ferroelectric capacitor process for radiation hard non-volatile universal memory applications[J].Non-Volatile Memory Technology Symposium,2005,16:20.
[23] Berman LS .Simulation of the capacitance-voltage characteristics of a ferroelectric material[J].Semiconductors,2005(12):1387-1390.
[24] Benedetto J.M.;Moore R.A. .The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors[J].IEEE Transactions on Nuclear Science,1990(6):1713-1717.
[25] Takamuro D;Takao H;Sawada K.Electron emission characteristics from a single crystalline ferroelectric material by an infrared light irradiation[A].,2003:69.
[26] Scott J F;Zubko P .Electret effects in ferroelectric thin films[J].Electrets ISE International Symposium,2005,12:113.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%