采用直流磁控溅射法在铜基底上制备了TiAlN/SiO2选择性吸收薄膜.通过调整制备过程中的工艺参数,得到优化后的组合薄膜(铜基底),其吸收率可达0.92、发射率为0.06.在此组合膜系中,TiAlN为吸收层,SiO2为减反层.对基底为铜片的样品在550℃退火2h,其性质保持稳定,表明TiAlN/SiO2组合薄膜在高湿太阳能选择性吸收领域具有一定的应用前景.
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