在综述现有硅烷热解反应机理的基础上,针对Ho等人提出的气相和表面反应机理,采用二维边界层反应模型和CHEMKIN软件,对水平单基片CVD反应器进行模拟分析,计算结果与文献报道的实验数据拟合良好;通过改变硅烷进气浓度和进气温度,分析沉积速率的变化和各表面反应的贡献率,得到硅微粉再沉积过程随浓度和温度的变化规律;使用上述机理模型,计算了硅烷流化床对应的操作温度和硅烷浓度条件下的沉积速率,与文献报道测量结果比较,误差在合理范围,表明该机理适用于硅烷流化床化学气相沉积过程的CFD耦合模拟.
Based on a critical review of reaction kinetics of silane decomposition reported in literature,a simplified gas and surface reaction mechanisms are used for analyzing a horizontal single-substrate reactor with the 2-D boundary-layer reaction model of CHEMKIN software.The predicted growth rates of silicon agree well with the literature data.The effects of operation conditions on growth rate,such as the silane concentrations and the gas temperatures,were examined and the cluster savenging mechanisms were evaluated numerically.Neglecting the flow characteristics,the Ho mechanisms were used in the simulation under conditions of the mimic fluidized bed silane CVD reactor.The predicted growth rate is comparable with experimental data,indicating the above mechanisms can be further applied in CFD simulation of silane fluidized bed CVD reactors.
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