对电解电容器铝箔交流腐蚀体系中各影响因素的研究结果表明，在电流密度为０．５Ａ／ｃｍ２，温度为４７±２℃；控制腐蚀液中Ａｌ（３＋）含量及适量添加表面保护剂和辅助添加剂的条件下，可获得最大比电容。通过循环伏安曲线测试，探讨了各因素影响腐蚀的机理及相互关系。
Alternating current etching is an important technique for increasing the specific surface area of aluminium capacitor foil for low voltage use. The present research was carried out on the influence of etchant bath composition and operating parameters to obtain a desirable surface morphology and high capacitance of the etched foil while keeping its tensile strength within the required range. Experimental results showed that the etched foil with the largest capacitance up to 33 μF/cm2 could be obtained at a temperature of 47±2℃ and current density of 0.5A/cm2 in a hydrochloric acid etching solution containing a proper surface protectant and another auxiliary additive with the Al3+ concentration from 5.36 to 6.55g/L. Cyclic voltammetric curves were measured to explain the mechanism and effects of above-mentioned factors on AC etching.
参考文献
| [1] | |
| [2] |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%