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通过自组装层法在SiO2基底上化学镀了Ni-Mo-P薄膜,薄膜的厚度和成分通过X射线荧光仪(XRF)测定.利用新型在线应力测试方法(相干梯度敏感法CGS)对退火过程中的应力进行了全场在线测试.结果表明,定量计算得到特定成分的生长应力为3.85 GPa;在600℃、700℃退火过程中,薄膜的应力首先出现轻微缓解,之后由于热应力作用,基底与薄膜边缘处易出现应力集中,应力值高达10.1 GPa,是薄膜断裂的高危区域;薄膜的平均残余应力经热处理后得到部分缓解.

参考文献

[1] J.S. FANG;J.H. LIN;B.Y. CHEN;G.S. CHEN;T.S. CHIN .Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects[J].Journal of Electronic Materials,2012(1):138-143.
[2] 黄浩,魏喆良,唐电.半导体金属互连集成技术的进展与趋势[J].金属热处理,2004(08):26-31.
[3] Keng-Liang Ou .Integrity of copper-hafnium, hafnium nitride and multilayered amorphous-like hafnium nitride metallization under various thickness[J].Microelectronic engineering,2006(2):312-318.
[4] Yoshino M;Masuda T;Yokoshima T;Sasano J;Shacham-Diamand Y;Matsuda I;Osaka T;Hagiwara Y;Sato I .Electroless diffusion barrier process using SAM on low-k dielectrics[J].Journal of the Electrochemical Society,2007(3):D122-D125.
[5] Wang Z L;Sakaue H;Shingubara S et al.Influence of surface oxide of sputtered TaN on displacement platingof Cu[J].Japanese Journal of Applied Physics,2003,42:1843-1846.
[6] Murarka S P;Hymes S W .Copper metallization for UISI and beyond[J].Critieal Reviews in Solid State and Materials Sciences,1995,20(02):87-124.
[7] 王增林,刘志鹃,姜洪艳,王秀文,新宫原 正三.化学镀技术在超大规模集成电路互连线制造过程的应用[J].电化学,2006(02):125-133.
[8] 谢琦 .集成电路铜互连工艺中先进扩散阻挡层的研究[D].复旦大学,2008.
[9] Y.WU;C.C.WAN;Y.Y.WANG .Fabrication of Potential NiMoP Diffusion Barrier/Seed Layers for Cu Interconnects via Electroless Deposition[J].Journal of Electronic Materials,2005(5):541-550.
[10] Osaka T.;Takano N.;Kurokawa T.;Kaneko T.;Ueno K. .Characterization of chemically-deposited NiB and NiWB thin films as a capping layer for ULSI application[J].Surface & Coatings Technology,2003(0):124-127.
[11] Ling Q;Cai J;Wang S D.Electroless NiMoP thin film deposition on Si/SiO2[J].Electronic Packaging Technology,2007:1-5.
[12] Dian-long Liu;Zhi-gang Yang;Chi Zhang .Electroless Ni-Mo-P diffusion barriers with Pd-activated self-assembled monolayer on SiO_2[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2010(1):67-75.
[13] 刘璐,杨志刚,刘殿龙,张弛.自组装方法化学沉积NiMoP镀层研究[J].稀有金属材料与工程,2009(05):895-900.
[14] Petra Alen;Mikko Ritala;Kai Arstila;Juhani Keinonen;Markku Leskela .The growth and diffusion barrier properties of atomic layer deposited NbN_x thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):235-241.
[15] Flinn P A;Gardner D S;Nix W D .Measurement and interpretation of stress in aluminum-based metallization as a function of thermal history[J].IEEE Transactions on Electron Devices,1987,34(03):689-699.
[16] Ohno T;Malic B;Fukazawa H;Wakiya N;Suzuki H;Matsuda T;Kosec M .Origin of compressive residual stress in alkoxide derived PbTiO3 thin film on Si wafer[J].Japanese journal of applied physics,2008(9 Pt.2):7514-7518.
[17] Chason E.;Sheldon BW.;Freund LB.;Floro JA.;Hearne SJ. .Origin of compressive residual stress in polycrystalline thin films - art. no. 156103[J].Physical review letters,2002(15):6103-0.
[18] A. J. Rosakis;R. P. Singh;Y. Tsuji;E. Kolawa;N. R. Moore Jr. .Full field measurements of curvature using coherent gradient sensing: application to thin film characterization[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(1/2):42-54.
[19] FreundLB;Suresh S;卢磊.薄膜材料[M].北京:科学出版社,2006
[20] Feng X;Huang Y;Rosakis A J .Study on the Stoney formula for a thin film/substrate system with nonuniform substrate thickness[J].Journal of Applied Mechanics,Transactions of the ASME,2007,74:1277-1281.
[21] Huang Y;Rosakis A J .Extension of stoney' s formula to non-uniform temperature distributions in thin film/substrate systems[J].Journal of the Mechanics and Physics of Solids,2005,53:2483-2500.
[22] W. D. Nothwang;M. W. Cole;S. G. Hirsch .Grain Growth and Residual Stress in BST Thin Films[J].Integrated Ferroelectrics,2005(1):107-113.
[23] Y. Zhang;J.A. Sharon;G.L. Hu .Stress-driven grain growth in ultrafine grained Mg thin film[J].Scripta materialia,2013(6):424-427.
[24] Evans H E .Stress effects in high temperature oxidation[J].International Materials Reviews,1995,40(01):1-40.
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