采用溶胶-凝胶工艺在Pt/TiO2/Si衬底上制备Bi3.75Ce0.25Ti3O12电致阻变薄膜，研究退火温度对Bi3.75Ce0.25Ti3O12薄膜结构和介电、阻变特性的影响，分析了薄膜在低阻态和高阻态时的电流传导机理。结果表明，所制备Bi3.75Ce0.25Ti3O12薄膜具有单一的钙钛矿晶格结构，不同退火温度Bi3.75Ce0.25Ti3O12薄膜的低、高阻态电流比ILRS/IHRS在104~106，在600℃时有2.5 V的最低Vset电压。无论是高阻态还是低阻态，Bi3.75Ce0.25Ti3O12薄膜的介电常数都随退火温度的升高而增大，介电损耗则随退火温度的升高而减小，高阻态大于低阻态时的介电常数和介电损耗。在低阻态和高阻态的低压区以欧姆传导为主，在高阻态的高压区以空间电荷限制电流（SCLC）传导为主。
Bi3.75Ce0.25Ti3O12 thin films were prepared on Pt/TiO2/Si substrates by sol ? gel method. The structure and resistive switching characteristics and dielectric properties of Bi3.75Ce0.25Ti3O12 thin films annealed at various temperatures were studied. The thin films show that a perovskite phase,and clear current ratio of different resistance with 104
参考文献
| [1] | Kyung Min Kim;Byung Joon Choi;Yong Cheol Shin;Seol Choi;Cheol Seong Hwang .Anode-interface localized filamentary mechanism in resistive switching of TiO_(2) thin films[J].Applied physics letters,2007(1):012907-1-012907-3-0. |
| [2] | J. Y. Son;Y.-H. Shin .Direct observation of conducting filaments on resistive switching of NiO thin films[J].Applied physics letters,2008(22):222106-1-222106-3-0. |
| [3] | Liu Q;Guan WH;Long SB;Jia R;Liu M;Chen JN .Resistive switching memory effect of ZrO2 films with Zr+ implanted[J].Applied physics letters,2008(1):12117-1-12117-3-0. |
| [4] | 顾晶晶,陈琳,徐岩,孙清清,丁士进,张卫.NiOx阻变存储器性能增强方法及相关机理研究[J].复旦学报(自然科学版),2010(06):703-708. |
| [5] | Seunghyup Lee;Heejin Kim;Dong-Jin Yun;Shi-Woo Rhee;Kijung Yong .Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices[J].Applied physics letters,2009(26):262113-1-262113-3. |
| [6] | Shi L;Shang D;Sun J et al.Bipolar resistance switching in ful-ly transparent ZnO:Mg-based devices[J].Appl Phys Express,2009,2(10):101602. |
| [7] | Misra P;Das A K;Kukreja L M .Switching characteristic eris-tics of ZnO based transparent resistive random access memory devices grown by pulsed laser deposition[J].Physics Status Solidi(c),2010,7(06):1718-1720. |
| [8] | Chang WY;Lai YC;Wu TB;Wang SF;Chen F;Tsai MJ .Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications[J].Applied physics letters,2008(2):22110-1-22110-3-0. |
| [9] | Nuo Xu;Lifeng Liu;Xiao Sun;Xiaoyan Liu;Dedong Han;Yi Wang;Ruqi Han;Jinfeng Kang;Bin Yu .Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories[J].Applied physics letters,2008(23):232112-1-232112-3-0. |
| [10] | Villafuerte M;Heluani S P;Juarez G et al.Electric-pulse-in-duced resistance in doped zinc oxide thin films[J].Applied Physics Letters,2007,90(05):052105-052105-3. |
| [11] | Lin C C;Lin C Y;Lin M H et al.Voltage-polarity-indepen-dent and high-speed resistive switching properties of V-doped SrZrO3 thin films[J].IEEE Transactionon,2007,54(12):3146-3151. |
| [12] | KRZYSZTOF SZOT;WOLFGANG SPEIER;GUSTAV BIHLMAYER;RAINER WASER .Switching the electrical resistance of individual dislocations in single-crystalline SrTiO_3[J].Nature materials,2006(4):312-320. |
| [13] | R. Ranjith;W. Prellier;Jun Wei Cheah;Junling Wang;Tom Wu .dc leakage behavior and conduction mechanism in (BiFeO_(3))_(m)(SrTiO_(3))_(m) superlattices[J].Applied physics letters,2008(23):232905-1-232905-3-0. |
| [14] | Schindler C;Thermadam S C P;Waser R et al.Bipolar and unipolar resistive switching in Cu - Doped SiO2[J].IEEE Transactionon,2007,54(10):2762-2768. |
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