采用热丝辅助MWECR-CVD系统制备出了a-Si:H薄膜.应用傅立叶红外仪测量了薄膜的红外谱,用共面蒸铝电极法测量了薄膜的光电导.通过比较A样品(加入热丝)和B样品(未加热丝),得出在热丝辅助MWECR-CVD系统制备非晶硅薄膜过程中,热丝的光照对薄膜的抗衰退起到了关键作用,用该系统制备非晶硅薄膜,大大降低了薄膜中的总氢含量,提高了薄膜的稳定性,同时,Si-H键合体的摇摆模发生了红移.
参考文献
[1] | Matsumoto et al.Growth Diamond Particles from Methance-hydrogen Gas[J].Journal of Materials Science,1982,17(11):3106-3112. |
[2] | Bonnot B M .Synthesis of Diamond Thin Films by Hot-Filament-Assisted Chemical Vapour Deposition[J].Thin Solid Films,1990,185(01):111-121. |
[3] | Doyle J;Roerlson R;Lin G H et al.Production of High-Quality Amorphous Silion Films by Evaporation Silane Surface Decomposition[J].Journal of Applied Physics,1988,64(06):3215-3223. |
[4] | Zedlitz R;essler F K;Heintze M .Deposition of a-Si:H with the Hot Wire Technique[J].Journal of Non-Crystalline Solids,1993,164:83-86. |
[5] | 姚若河;林揆训.辉光放电的质谱研究[A].南昌,1991:287-289. |
[6] | 陈国,郭晓旭,朱美芳,孙景兰,许怀哲,韩一琴.热丝法制备纳米晶硅薄膜结构及沉积机制的研究[J].物理学报,1997(10):2015-2022. |
[7] | Nomoto K et al.Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon[J].Japanese Journal of Applied Physics,1990,29(08):L1372-L1375. |
[8] | Kaneko T et al.Crystalline Fraction of Microcrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapour Deposition Using Pulsed Silane Flow[J].Japanese Journal of Applied Physics,1993,32(11A):4907-4911. |
[9] | Nakayama Y et al.High-Rate Deposition of a-Si:H Film Using the Decomposition of Mono-silane[J].Japanese Journal of Applied Physics,1982,21(10):L604-L606. |
[10] | 薛华;于积贞;李永忠 .掺氢非晶硅薄膜材料光稳定性的研究[J].西北民族学院学报(自然科学版),2000,21(01):14-16. |
[11] | Yamanaka M;Hayashi Y;Sakata I .Effect of Visible-light Illumination on the Growing Surface of an a-Si:H Film in Plasma Decomposition of SiH4[J].Journal of Applied Physics,1990,29(02):217-220. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%