In this paper, a deposition feature of a SiC:H films deposited by a RF sputtering system and a effect on the hardness of the films with various deposition conditions are investigated, and the effects of the silicon on a C:H are studied. It follows from the results that the properties of hardness can be changed with the depositing conditions. An increase of silane in the gas phase allows to deposit a SiC:H having tetrahedral structure. The sets of deposition conditions by which the different types of a SiC:H films can be deposited are obtained.
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