采用陶瓷烧结靶材、射频磁控溅射法制备了(002)择优取向的Al掺杂ZnO薄膜,着重研究了不同的热处理工艺对显微结构、光电性能的影响.结果表明,真空400℃退火能大幅提高ZAO薄膜的导电性能,并保持其平均透光率在85%以上,而非真空退火(大气环境)将使ZAO薄膜材料绝缘化,400℃真空退火时间或退火次数对导电性能无明显影响,但随退火时间和退火次数的增加薄膜组织恶化,在真空循环退火条件下尤为严重;经400℃真空退火的薄膜样品,其最低电阻率达8.4×10-4Ω·cm.
参考文献
| [1] | 裴志亮,张小波,王铁钢,宫骏,孙超,闻立时.ZnO：Al（ZAO）薄膜的制备与特性研究[J].金属学报,2005(01):84-88. |
| [2] | E. Fortunato;P. Barquinha;A. Pimentel;A. Goncalves;A. Marques;L. Pereira;R. Martins .Recent advances in ZnO transparent thin film transistors[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):205-211. |
| [3] | 傅竹西,林碧霞.氧化锌薄膜光电功能材料研究的关键问题[J].发光学报,2004(02):117-122. |
| [4] | Wei Shao,Ruixin Ma,Bin Liu.Fabrication and properties of ZAO powder, sputtering target materials and the related films[J].北京科技大学学报（英文版）,2006(04):346-349. |
| [5] | Chen M.;Sun C.;Gong J.;Huang RF.;Wen LS.;Pei ZL. .ZAO: an attractive potential substitute for ITO in flat display panels[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2001(2/3):212-217. |
| [6] | 庄惠照,何建廷,薛成山,张晓凯,田德恒,胡丽君,薛守斌.衬底温度对PLD方法生长Si（111）基ZnO薄膜结晶质量和发光特性的影响[J].稀有金属材料与工程,2006(07):1105-1108. |
| [7] | 马瑾,余旭浒,计峰,王玉恒,张锡健,程传福,马洪磊.真空退火对溅射淀积ZnO：Ga透明导电膜性能的影响[J].稀有金属材料与工程,2005(07):1166-1168. |
| [8] | 吕珺,汪冬梅,陈长奇,吴玉程,郑治祥.退火处理对不同RF功率下制备ZnO薄膜的结晶性能的影响[J].材料热处理学报,2006(03):26-31. |
| [9] | 汪冬梅,吕珺,徐光青,吴玉程,郑治祥.纯Ar气氛中退火对Al掺杂ZnO薄膜性能的影响[J].材料热处理学报,2007(04):46-50. |
| [10] | Fang GJJ.;Li DJ.;Yao BL. .Influence of post-deposition annealing on the properties of transparent conductive nanocrystalline ZAO thin films prepared by RF magnetron sputtering with highly conductive ceramic target[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(2):156-162. |
| [11] | Kuo SY;Chen WC;Lai FI;Cheng CP;Kuo HC;Wang SC;Hsieh WF .Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films[J].Journal of Crystal Growth,2006(1):78-84. |
| [12] | J. F. Chang;M. H. Hon .The effect of deposition temperature on the properties of Al-doped zinc oxide thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1):79-86. |
| [13] | Kim KH.;Ma DY.;Park KC. .STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ALUMINUM DOPED ZINC OXIDE FILMS PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING[J].Journal of Applied Physics,1997(12):7764-7772. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%