采用金属有机化学气相沉积(MOCVD)方法,由NO和N2O混合气体在玻璃衬底上沉积了p型ZnO薄膜.NO和N2O流量分别为40和25 sccm时,得到最低电阻率5.52Ω·cm, 同时样品的空穴浓度最高,为2.17×1018cm-3,电性能的稳定性也最好.全部样品放置四个月后仍为p型,但电阻率增大.
Nitrogen-doped p-type zinc oxide (ZnO) thin films were deposited on glass substrates by metalorganic chemical vapor deposition (MOCVD). The p-type ZnO, with the lowest resistivity of 5.52Ω·cm and the highest hole concentration of 2.17×1018cm-3, can be achieved at the NO and N20 flow rates of 40 and 25sccm, respectively, and the sample was most stable. Four months later, all samples still showed p-type conduction, but the resistivities were increased.
参考文献
| [1] | Wong E C, Searon P C. Appl. Phys. Lett., 1999, 74: 2939--2941. [2] Yu P, Tang Z K, Wong G K L, et al. J. Cryst Growth, 1998, 184-185: 601--604. [3] 徐彭寿, 孙玉明, 施朝淑, 等. 中国科学, 2001, 31 (4): 358--365. [4] Kanai Y. J. Appl. Phys., 1991, 30 (4): 703--707． [5] Ryu Y R, Zhu S, Look D C, et al. J. Cryst Growth, 2000, 216 (1-3): 330--334. [6] Li X, Yan Y, Gessert T A, et al. J. Vac. Sci. Technol., 2003, 21 (4): 1342--1345. [7] Aoki T, Hantanaka Y, David C Look. [J]. Appl. Phys. Lett., 2000, 76 (22): 3257--3258． [8] Kim K K, Kim H S, Hwang D K, et al. Appl. Phys. Lett., 2003, 83 (1): 63--65. [9] Joseph M, Tabata H, Saeki H, et al. Physica B, 2001, 302-303: 140--148． [10] Singh A V, Mehra R M, Wakahara A, et al. J. Appl. Phys., 2003, 93 (1): 396--399. [11] Ye Z Z, Zhu-Ge F, Lu J G, et al. J. Cryst Growth, 2004, 265 (1-2): 127--132． [12] Bian J M, Li M X, Gao D, et al. Appl. Phys. Lett., 2003, 84 (4): 541--543． [13] Yan Yanfa, Zhang S B, Pantelides S T. Phys. Rev. Lett., 2001, 86 (25): 5723--5726. [14] Park C H, Zhang S B, Wei S H. Phys. Rev. B, 2002, 66: 073202--073204. [15] Zhang S B, Wei S H, Zuger A. Phys. Rev. B, 2001, 63: 075205--075211. [16] Look D C, Hemsky J W, Sizelove J R. Phys. Rev. Lett., 1999, 82 (12-22): 2552--2555. [17] Lee E C, Kim Y S, Jin Y G, et al. Phys. Rev. B, 2001, 64: 085120--085124. |
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