采用Sol-gel法在Pt/Ti/SiO_2/Si衬底上制备了Bi_(0.85)Eu_(0.15)FeO_3薄膜.研究了退火温度对其晶相形成的影响,发现在较低温度退火(450℃)时,Bi_(0.85)Eu_(0.15)FeO_3晶相开始形成,但存在杂相,而且结晶度较差;在490600℃可以获得结晶较好的单相Bi_(0.85)Eu_(0.15)FeO_3薄膜.同时对经550℃退火的薄膜的介电、铁电和铁磁性能进行了研究,结果表明,Bi_(0.85)Eu_(0.15)FeO_3薄膜具有较好的介电及铁磁性能.当测试频率为1MHz时,薄膜的介电常数和介电损耗分别为80、0.024,饱和磁化强度约为26.2emu/cm~3.
The Bi_(0.85)Eu_(0.15)FeO_3 thin films are prepared by the sol-gel method on the Pt/Ti/SiO_2/Si substrata.Effect of annealing temperature on the formation of Bi_(0.85)Eu_(0.15)FeO_3 phase is investigated.It is found that the Bi_(0.85)Eu_(0.15)FeO_3 phase appears in the films annealed at low temperature (450℃),but the degree of crystallinity is poor and the impurity phase exists in the films.The well crystalline and single Bi_(0.85)Eu_(0.15)FeO_3 phase of the films annealed at 490～600℃ can be obtained.The dielectric properties,ferroelectric properties,and ferromagnetic properties of the film annealed at 550℃ are investigated.The Bi_(0.85)Eu_(0.15)FeO_3 film shows good dielectric and ferromagnetic properties.When the measuring frequency is 1MHz,the dielectric constant and dielectric loss are 80 and 0.024,respectively.The saturated magnetization is about 26.2emu/cm~3.
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