欢迎登录材料期刊网

材料期刊网

高级检索

综述了硅中氮离子注入的应用和研究进展.主要讨论了氮离子注入形成SOI层的原理、质量的影响因素和电学性能;介绍了氮离子注入在制备超薄氧化栅极及其抑制掺杂杂质原子特别是硼原予扩散等方面的研究和应用.

参考文献

[1] Freeman J.[A].,1970:74.
[2] Dexter R J .[J].Applied Physics Letters,1973,23:455.
[3] Stanley W Polchopek .Properties of Nitrogen-Implanted SOI Substrates[J].IEEE Transactions on Electron,1991,40:3503.
[4] Chang P H .[J].Journal of Applied Physics,1987,61:166.
[5] Petruzzello J .[J].Journal of Applied Physics,1985,58:4605.
[6] Miyagawa Y ."Silicon Nitride Layer in Silicon Formed by Nitrogen Implantation with Multiple Energy" IEEE[Z].,1999.
[7] Benkherourou O .[J].Vacuum,1999,53:427.
[8] Mitchell J B .[J].Journal of Applied Physics,1975,46:335.
[9] Reeson K J .[J].Applied Physics Letters,1987,50:1882.
[10] Brower K L .[J].Physical Review Letters,1980,44:1627.
[11] Belogorokhov A I .[J].Nuclear Instruments and Methods in Physics Research B:Beam Interaction with Materials and Atoms,1999,147:320.
[12] Liu C T .[J].IEEE Transactions on Electron Devices,1997,18:105.
[13] Brian Doyle;Member .[J].IEEE Transactions on Electron Devices,1995,16:301.
[14] Khoueir A .XPS Analysid of RTP Formed Ultrathin-Gate Oxynitride via Low Energy Nitrogen Implantation[J].IEEE,1999,ST5-01:229.
[15] Hah L K .Electrical Characteristics and Reliability and sub-3nm Gate Oxide Grown on Nitrogen Implanted Sili con subtrates[Z].IBM Semiconductor Research and Deve lopment Center,1997.
[16] Nam In Ho .[J].,2001,48:2310.
[17] Nam In-Ho .IEEE Transactions on electron device[J].,1999,48:26.
[18] Nakashima S.Suppression of Lateral Transient Enhanced Dopant Diffusion by Nitrogen Implantation and its Appli cation to Fully Depleted MOSFET' S/SIMOX IEEE[M].,1999:122.
[19] Liu T .IEEE electron device letter[J].,1997,18:212.
[20] Liu T .IEEE electron device letter[J].,1997,18:61.
[21] Kurol T .Symposium on VLSI Technology Digest of Technical Papers[R].IEEE,1994.
[22] STANLEY W;Polchopek.Properties of Nitrogen-Implanted SOI Substrates[M].,1993:385.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%