用射频磁控溅射技术,在纯氩气氛中不同溅射功率(120W～210W)下于玻璃衬底上制备了Al掺杂ZnO(ZAO)薄膜.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、光谱仪和四探针测试仪等对所制备的薄膜进行了晶体结构、光学和电学性能分析.结果表明,纯氩气氛中不同溅射功率下玻璃衬底上原位沉积的ZAO薄膜具有明显的c轴择优取向性,它没有改变ZnO的六角纤锌矿结构;ZAO薄膜的可见光区平均透光率不强烈依赖于溅射功率,为75%左右;原位沉积ZAO薄膜的电阻率达到102Ω·cm数量级范围,随溅射功率由120 W增大到210 W时,薄膜电阻率从132.67 Ω·cm降低到21.08 Ω·cm.
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