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  4. 脉冲激光沉积AlN薄膜的结构表征和性能研究进展

材料导报, 2010, 24(11): 45-49.

脉冲激光沉积AlN薄膜的结构表征和性能研究进展

谢尚晻 1, , 何欢 2, , 符跃春 3,

1.广西大学材料科学与工程学院,有色金属及材料加工新技术教育部重点实验室,南宁,530004

2.广西大学材料科学与工程学院,有色金属及材料加工新技术教育部重点实验室,南宁,530004

3.广西大学材料科学与工程学院,有色金属及材料加工新技术教育部重点实验室,南宁,530004

关键词： 脉冲激光沉积 , AlN薄膜 , 衬底 , 工艺参数 , 性能

Development of Structural Characterization and Properties of AIN Film Prepared by Pulsed Laser Deposition

脉冲激光沉积法(PLD)以其低温成膜优势被公认为是宽禁带半导体AIN薄膜的优选制备方法.获得高质量的AIN薄膜需要最佳的薄膜/衬底匹配和工艺参数.综述了各种常见异质外延衬底与AlN薄膜的取向关系,分析了影响薄膜质量的工艺因素,介绍了薄膜在电、光、热方面的性能研究现状,并指出了今后工作的方向.

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