采用在多孔载体上预涂分子筛晶种及合成分子筛的前驱态溶胶液,再进行水热晶化合成X型分子筛膜.预涂液为0.2%～0.5%的中性悬浮水溶液,预负载晶种的载体二次生长的条件是在95℃下水热处理24～96 h.通过晶化操作3～4次后,多孔载体上负载生长的分子筛膜厚为10～25 μm.采用二次生长成膜法,减少晶化次数,从而缩短了成膜时间.在三次晶化操作后,分子筛膜对He和N2的渗透通量下降为载体渗透通量的1%以下,纯(C4H9)3N和(C4F9)3N的渗透通量之比可达21(350℃);而四次晶化后,渗透侧已检测不出(C4F9)3N存在.
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