Crystal Perfection in GaP Films Heteroepitaxially Grown on GaAs by Low-pressure Metalorganic Chemical Vapor Deposition

稀有金属（英文版）, 2000, 19(2): 87-90.

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1.Institute of Crystal Materials,Shandong University,Jinan 250100,China

2.Institute of Crystal Materials,Shandong University,Jinan 250100,China

3.Institute of Crystal Materials,Shandong University,Jinan 250100,China

4.Laboratory of Excited State Processes,Chinese Academy of Sciences,Changchun 130021,China

5.Institute of Crystal Materials,Shandong University,Jinan 250100,China

6.Institute of Crystal Materials,Shandong University,Jinan 250100,China

7.Institute of Crystal Materials,Shandong University,Jinan 250100,China

Crystal Perfection in GaP Films Heteroepitaxially Grown on GaAs by Low-pressure Metalorganic Chemical Vapor Deposition

Keywords： GaP

The crystal perfection in GaP epitaxial layers was stuided by the use of double crystal X-ray diffraction,backscattering spectrometry and Raman scattering techniques.GaP films grown on GaAs by low-pressure metalorganic chemical vapor deposition were used as the samples.By means of the morphology and the full-width at half maximum of X-ray diffraction peak for the GaP epilayers,the growth temperature and Ⅴ/Ⅲ ratio were optimized.In addition,the residual stress and strain of a GaP epilayer were calculated,based on Raman scattering measurement.

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Crystal Perfection in GaP Films Heteroepitaxially Grown on GaAs by Low-pressure Metalorganic Chemical Vapor Deposition

参考文献