基于光学增透膜与真空蒸发镀膜的基本原理,从MgF2原料状态、原料蒸镀质量、蒸发源与基片间距等方面,研究了热电阻和电子束蒸镀的MgF2薄膜厚度与其均匀性的控制工艺,以制备出高效的MgF2增透膜.结果表明:对于颗粒度较小或熔点较低的原料,热电阻比电子束蒸镀更易控制,并可避免原料污染；原料实际蒸镀质量与膜厚呈较好的线性关系；实际蒸镀质量相同的多晶颗粒与粉末状原料相比,前者蒸镀膜更厚；基片置于旋转工转盘中心比其侧部区域蒸镀膜更厚、均匀性更好.最后利用旋转球面夹具的小平面源蒸发模型很好地解释了上述实验结果.
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