碳基材料作为场发射阴极的候选对象,一直是场发射领域中的研究热点,掺杂则是提高场发射性能的重要手段之一,由于基质材料和掺杂物的不同,掺杂可能产生提高电导率、调制功函数、改变粒度大小、引入缺陷等诸多效果.综述了这些可能的掺杂效果以及对场发射性能带来的影响,分析了各种碳基材料与杂质之间的关系,指出了今后需解决的主要问题,并为以后的研究提出了一些建议.
参考文献
| [1] | Ken Okano;Satoshi Koizumi;Ravi P S et al.[J].Nature,1996,381:140. |
| [2] | Chiharu Kimura;Kenji Kuriyama;Satoshi Koizumi et al.[J].Applied Surface Science,1999,146:295. |
| [3] | Kundoo S;Saha P;Chattopadhyay K K .[J].Materials Letters,2004,58:3920. |
| [4] | Bhaswar Baral;John S Foord;Richard B Jaekman .[J].Diamond and Related Materials,1997,6:869. |
| [5] | Rahul Sen;Satishkumar B C;Govindaraj A et al.[J].Chemical Physics Letters,1998,287:671. |
| [6] | Gohel A;Chin K C;Zhu YW et al.[J].Carbon,2005,43:2530. |
| [7] | I-Nan Lin;Kuoguang Pemg;Lien-Hsin Lee .Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-deposited diamond films[J].Applied physics letters,2000(9):1277-1279. |
| [8] | Man-Seob Choi;Jin-Ho Kim;Yong-sang Kim .[J].J Non-Crys-talline Solids,2003,324:187. |
| [9] | Zheng W T;Li J J;Wang X et al.[J].Journal of Applied Physics,2003,94:2741. |
| [10] | Satoru Suzuki;Chris Bower;Yoshio Watanabe .Work functions and valence band states of pristine and Cs-intercalated single-walled carbon nanotube bundles[J].Applied physics letters,2000(26):4007-4009. |
| [11] | 柳堃,晁明举,李华洋,梁二军,袁斌.碳纳米管和镓掺杂碳纳米管场发射性能研究[J].无机材料学报,2007(01):181-184. |
| [12] | Byeongchul Ha;Cheol Jin Lee .[J].Applied Physics Letters,2007,90:023108. |
| [13] | 张华,谭伟,张振华,陈小华.氟掺杂对碳纳米管场发射特性的影响[J].长沙理工大学学报（自然科学版）,2007(02):79-83. |
| [14] | Morell G;Gonzalez-Berrios A;Weiner BR;Gupta S .Synthesis, structure, and field emission properties of sulfur-doped nanocrystalline diamond[J].Journal of Materials Science. Materials in Electronics,2006(6):443-451. |
| [15] | Baranauskas V;Sampaio M A;Peterlevitz A C et al.[J].J Phys:Conference Series,2007,61:66. |
| [16] | Gupta S;Weiner B R;Morell G .[J].Diamond and Related Materials,2002,11:799. |
| [17] | Yen-Chih Lee;Su-Jien Lin et al.[J].Journal of Applied Physics,2005,97:054310. |
| [18] | Roos M;Baranauskas V;Fontana M et al.[J].Applied Surface Science,2007,253:7381. |
| [19] | Tan Manlin;Zhu Jiaqi;Han Jiecai et al.[J].Materials Research Bulletin,2008,43:453. |
| [20] | 李强,柳堃,李华洋,梁二军.掺杂对碳纳米管拉曼光谱及场发射性能的影响[J].光散射学报,2006(01):16-20,15. |
| [21] | Euo Sik Cho;Byung-Gook Park;Jong Duk Lee;Sang Jik Kwon .Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2003(1):603-607. |
| [22] | Yoshiyuki Showa;Toshikazu Matsukawa;Mitsuo Iwase et al.[J].Materials Chemistry and Physics,2001,72:201. |
| [23] | Chen CF.;Lin CL.;Shen CH. .The characterization of nitrogen content, diamond-like carbon field emission arrays using a magnetic filtered arc method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(0):326-330. |
| [24] | Li Junjie;Zheng Weitao;Gu Changzhi et al.[J].CARBON,2004,42:2309. |
| [25] | Ahmed Sk F;Mitra M K;Chattopadhyay K K et al.[J].Applied Surface Science,2007,253:5480. |
| [26] | Kundoo S;saha P;Chattopadhyay K K .[J].Materials Letters,2004,58:3920. |
| [27] | Takashi Sugino;Kenji Kuriyama;Chiharu Kimura .Temperature dependence of field emission characteristics of phosphorus-doped polycrystalline diamond films[J].Applied physics letters,1998(1/6):268-270. |
| [28] | Kock F A M;Garguilo J M;Nemanich R J et al.[J].Diamond and Related Materials,2003,12:474. |
| [29] | Sk F Ahmed;Mitra M K;Chattopadhyay K K .[J].Journal of Physics:Condensed Matter,2007,19:346233. |
| [30] | Xu N S;Chen J;Deng S Z et al.[J].Applied Physics Letters,2000,76:2463. |
| [31] | Yung-Hsin Chen;Chen-Ti Hu;I-Nan Lin .[J].Applied Surface Science,1999,142:516. |
| [32] | Wua Y H;Hsua C M;Chiab C T .[J].Diamond and Related Materials,2002,11:804. |
| [33] | Masatsugu Itahashi;Yasunobu Umehara;Yasuo Koide .Field emission of polycrystalline diamond films grown by microwave plasma chemical vapor deposition. II. Effect of p-type doping in diamond[J].Diamond and Related Materials,2001(12):2118-2124. |
| [34] | Bandis C;Pate B B .[J].Applied Physics Letters,1996,69:366. |
| [35] | Gupta S;Weiner B R;Morell G .[J].Applied Physics Letters,2002,80:1471. |
| [36] | 李强,梁二军.碳、碳氮和硼碳氮纳米管场发射性能的比较研究[J].物理学报,2005(12):5931-5936. |
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