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用微波等离子体化学气相沉积法同质外延生长了有缺陷的金刚石颗粒.在同质外延之前,研究了温度因素对金刚石生长表面形貌的影响,研究表明适宜金刚石同质外延的温度范围非常窄,在1030℃左右;温度低于920℃,大尺寸的金刚石单晶颗粒就很难得到,二次形核现象变的很严重.在实验得出的优化温度条件下,对表面有缺陷的天然金刚石进行了同质外延生长,用扫描电子显微镜(SEM)观察发现,原来金刚石表面的裂缝被修复,外延生长速率达到10.3μm/h.

参考文献

[1] May PW. .Diamond thin films: a 21st-century material[J].Philosophical transactions of the Royal Society. Mathematical, physical, and engineering sciences,2000(1766):473-495.
[2] 满卫东,汪建华,王传新,马志斌.金刚石薄膜的性质、制备及应用[J].新型炭材料,2002(01):62-70.
[3] 蒋翔六.金刚石薄膜研究进展[M].北京:化学工业出版社,1991:10.
[4] Teraji T.;Mitani S.;Wang CL.;Ito T. .Growth of high-quality homoepitaxial CVD diamond films at high growth rate[J].Journal of Crystal Growth,2002(1/4):287-292.
[5] T. Teraji;M. Hamada;H. Wada .High rate growth and electrical/optical properties of high-quality homoepitaxial diamond (100) films[J].Diamond and Related Materials,2005(3/7):255-260.
[6] T. Teraji;M. Hamada;H. Wada .High-quality homoepitaxial diamond (100) films grown under high-rate growth condition[J].Diamond and Related Materials,2005(11/12):1747-1752.
[7] MokunoY;Chayahara A;Soda Y et al.High Rate Homoepitaxial Growth of Diamend by Microwave Plasma CVD with Nitrogen Addition[J].Diamond and Related Materials,2006,15:455-459.
[8] A. Chayahara;Y. Mokuno;Y. Horino;Y. Takasu;H. Kato;H. Yoshikawa;N. Fujimori .The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD[J].Diamond and Related Materials,2004(11/12):1954-1958.
[9] M. Stammler;H. EisenbeiB;J. Ristein;J. Neubauer;M. Gobbels;L. Ley .Growth of high-quality homoepitaxial diamond films by HF-CVD[J].Diamond and Related Materials,2002(3-6):504-508.
[10] Mizuochi N;Watanabe H;Isoya J et al.Hydrogon-related Defects in Single Cryatalline CVD Homoepitaxial Diamond Film Studied by EPR[J].Diamond and Related Materials,2004,13:765-768.
[11] Takeuchi S.;Murakawa M. .Synthesis and evaluation of high-quality homoepitaxial diamond made by the combustion flame method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(0):290-294.
[12] Man Weidong,Wang Jianhua,Li Lei,Zhang Baohua,Bai Yuming.Optical Characterization of Diamond Synthesis Using CH3OH-H2 Gas Mixtures[J].等离子体科学和技术(英文版),2005(02):2748-2752.
[13] John M.Larson;Steven L.Girshick .The effect of substrate temperature on the morphology of diamond films grown under acetylene-lean and acetylene-rich conditions[J].Diamond and Related Materials,2003(9):1584-1593.
[14] K. W. Chae;Y-J. Baik .Morphology of chemical vapor deposition diamond particles grown at high temperature[J].Diamond and Related Materials,1999(7):1261-1266.
[15] 黄元盛,邱万奇,罗承萍.基底材料和温度对CVD金刚石沉积的影响[J].中国表面工程,2004(04):32-34.
[16] 黄树涛,刘兴文,许立福,于骏一.基体温度对金刚石厚膜沉积质量的影响[J].材料科学与工艺,2003(03):324-326.
[17] 黄元盛,刘正义,邱万奇.CVD金刚石薄膜二次形核机制的研究[J].材料科学与工程,2001(01):53-55.
[18] Kirill Aldushin;Guntram Jordan;Wolfgang W. Schmahl .Kinematics of apophyllite leaching—A terrace-ledge-kink process within phyllosilicate interlayers[J].Journal of Crystal Growth,2006(1):161-168.
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