稀磁半导体研究的最新进展

功能材料, 2004, 35(z1): 1110-1115.

稀磁半导体研究的最新进展

李东 ^1, , 王耘波 ^2, , 于军 ^3, , 王宝义 ^4, , 魏龙 ^5,

1.华中科技大学,电子系,湖北,武汉,430074

2.华中科技大学,电子系,湖北,武汉,430074

3.华中科技大学,电子系,湖北,武汉,430074

4.中国科学院高能物理所,核分析技术重点实验室,北京,100039

5.中国科学院高能物理所,核分析技术重点实验室,北京,100039

基金项目: 中国科学院实验室基金(K-96) 国家自然科学基金(60171012)

关键词：稀磁半导体 , 居里温度 , 自旋-自旋交换 , 分子束外延法

Recent development on diluted magnetic semiconductors

本文系统地对于DMS的发展历史及研究现状进行了归纳总结,介绍了稀磁半导体特殊性质和机理,概述了目前DMS材料的制备方法,并对于DMS的应用前景和将来的研究方向进行了展望.

参考文献

[1]	Gregg J F;Allen W D;Viart N et al.[J].Journal of Magnetism and Magnetic Materials,1997,175(01):1-9.
[2]	Nagaev E L.Physics of Magnetic Semiconductors[M].MIR Moscow,1983
[3]	Craik D J.Magnetic Oxides[M].wiley New York,1975
[4]	Ohno H .Making Nonmagnetic Semiconductors Ferromagnetic[J].Science,1998,281:951.
[5]	刘宜华,张连生.稀释磁性半导体[J].物理学进展,1994(01):82.
[6]	Munekata H;Ohno H;von Molnar S et al.[J].Physical Review Letters,1989,63(17):1849-1852.
[7]	Ohno H;Shen A;Matsukura F et al.[J].Applied Physics Letters,1996,69(03):363-365.
[8]	Medvedkin G A;Ishibashi T;Nishi T et al.[J].Japanese Journal of Applied Physics,2000,39:L949.
[9]	Akinaga H;Manago T;Shirai M .[J].Japanese Journal of Applied Physics,2000,39:L1118.
[10]	Matsumoto Y;Murakami M;Shono T et al.[J].Science,2001,291:854.
[11]	Ueda K;Tabata H;Kawai T .[J].Applied Physics Letters,2001,79(07):988-990.
[12]	Wakano T.;Morinaga Y.;Abe N.;Ashida A.;Ito T.;Fujimura N. .Magnetic and magneto-transport properties of ZnO : Ni films[J].Physica, E. Low-dimensional systems & nanostructures,2001(1/3):260-264.
[13]	Dietl;Ohno H;Matsukura F et al.[J].Science,2000,287:1019.
[14]	Ohno H;Matsukura F;Omiya T et al.[J].Journal of Applied Physics,1999,85:4277.
[15]	Matsukura F;Ohno H;Shen A et al.[J].Physical Review B,1998,57(04):R2037-R2040.
[16]	Oiwa A.;Endo A.;Hirasawa M.;Iye Y.;Ohno H.;Matsukura F. Shen A.;Sugawara Y.;Katsumoto S. .NONMETAL-METAL-NONMETAL TRANSITION AND LARGE NEGATIVE MAGNETORESISTANCE IN (GA, MN)AS/GAAS[J].Solid State Communications,1997(4):209-213.
[17]	Von S;Munekata H;Ohno H et al.[J].Journal of Magnetism and Magnetic Materials,1991,93:356.
[18]	Dwilin R;Doradzin R;Garczyn J et al.[J].Diamond and Related Materials,1998,7(09):1348-1350.
[19]	Zajat M;Doradzin R;Gosk J et al.[J].Applied Physics Letters,2001,78(09):1276-1278.
[20]	Reed M L;Ritums M K;Stadelmaier H H et al.[J].Materials Letters,2001,51:500-503.
[21]	Reed M L;El-Masry N A;Stadelmaier H H et al.[J].Applied Physics Letters,2001,79(21):3473-3475.
[22]	Theodoropoulou N;Hebard A F;Overberg M E et al.[J].Applied Physics Letters,2001,78(22):3475-3477.
[23]	Minami T .[J].MRS Bulletin,2000,25(08):38.
[24]	Fukumura T;Jin Zhengwu;Ohtomo A et al.[J].Applied Physics Letters,1999,75:3366.
[25]	Sato K;Katayama-Yoshida H .[J].Japanese Journal of Applied Physics Part 2,2001,Part2,40:L334.
[26]	Ueda K;Tabata H;Kawai T .[J].Applied Physics Letters,2001,79(07):988-990.
[27]	Jin Z;Fukumura T;Kawasaki M et al.[J].Applied Physics Letters,2001,78(24):3824-3826.
[28]	Cho Y M;Choo W K;Kim H et al.[J].Applied Physics Letters,2002,80(18):3358-3360.
[29]	Chambers S A;Thevuthasan S;Farrow R F C et al.[J].Applied Physics Letters,2001,79(21):3467-3469.
[30]	Park WK.;Ortega-Hertogs RJ.;Moodera JS.;Punnoose A.;Seehra MS. .Semiconducting and ferromagnetic behavior of sputtered Co-doped TiO2 thin films above room temperature[J].Journal of Applied Physics,2002(10 Pt.3):8093-8095.
[31]	Seong NJ.;Yoon SG.;Cho CR. .Effects of Co-doping level on the microstructural and ferromagnetic properties of liquid-delivery metalorganic-chemical-vapor-deposited Ti1-xCoxO2 thin films[J].Applied physics letters,2002(22):4209-4211.
[32]	Matsumoto Y;Takahashi R;Murakami M et al.[J].Japanese Journal of Applied Physics Part 2,2001,40(11):L1204-L1206.
[33]	Kimura H;Fukumura T;Koinuma H et al.[J].Applied Physics Letters,2001,80(01):94-96.
[34]	宋书林;陈诺夫等.[J].金属材料研究,2003,29(01):1.
[35]	Shen A;Horikoshi Y;Ohno H et al.[J].Applied Physics Letters,1997,71:1540-1542.
[36]	Mohamed Henini .Ⅲ-Ⅴ based magnetic semiconductors[J].Magnetic Semiconductors,2000,13(03):32-37.
[37]	Hromasa Shimizu;Yoshiaki Hayashi;Tahu Nishinaga et al.Magnetic and transport properties of Ⅲ-Ⅴ based magnetic semiconductor(GaMn)As: Growth condition dependence[J].Applied Physics Letters,1999,74(03):398-400.
[38]	Jeong Min Baik;Ho Won Jang;Jong Kyu Kim;Jong-Lam Lee .Effect of microstructural change on magnetic property of Mn-implanted p-type GaN[J].Applied physics letters,2003(4):583-585.
[39]	Appleton B R;Eisen R H;Sigmon T W.Ion beam processes in advanced electronic materials and device technology[M].Pittsburgh, Pa Materials Research Society,1985
[40]	Tiwari A.;Jin C.;Kvit A.;Kumar D.;Muth JF.;Narayan J. .Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films[J].Solid State Communications,2002(6/7):371-374.
[41]	Laiho R.;Lahderanta E.;Stamov VA.;Zachvalinskiy VS.;Lashkul AV. .MAGNETIC FREEZING PHENOMENA IN (ZN1-XFEX)(3)AS-2[J].Journal of Magnetism and Magnetic Materials,1995(3):1769-1770.
[42]	Laiho R.;Stamov VN.;Zahvalinskii VS.;Lisunov KG. .SHUBNIKOV-DE HAAS EFFECT IN (CD1-X-YZNXMNY)(3)AS-2 FAR FROM THE ZERO-GAP STATE[J].The journal of physics and chemistry of solids,1996(1):1-5.
[43]	Kurodaa T;Tatsugawaa A;Minamia F et al.[J].Physica E-Low-Dimensional Systems & Nanostructures,2001,10(03):344-347.
[44]	Lee H-J;Jeong S-Y;Cho C R et al.[J].Applied Physics Letters,2002,81(21):4020-4022.
[45]	Cho Y -M;Choo W -K;Kim H et al.[J].Applied Physics Letters,2002,80(18):v3358-3360.
[46]	Fiederling R;Keim M;Reusher G et al.[J].Nature,1999,402:787-790.
[47]	Akiba N;Matsukura F;Shen A.[J].Applied Physics Letters

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稀磁半导体研究的最新进展

Recent development on diluted magnetic semiconductors

参考文献