用真空感应熔炼和定向凝固法制备多晶硅,通过成分测定和理论计算研究了铝杂质的除杂机理.结果表明,在真空熔炼保温阶段(T≥1723 K),硅中的铝杂质明显蒸发;在随后的定向凝固过程中,铝杂质的分凝偏析是主要的,但仍有部分铝蒸发.建立了一个包括铝分凝和蒸发机制的新模型,模拟铝在硅中的分布曲线.模拟结果与铝在硅中的实际分布符合得很好.
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