研究了一种快速有效地抛光CVD金刚石厚膜的技术.该技术是利用化学活性很强的稀土金属铈(Ce)与金刚石(碳)的固相化学反应,在一定的工艺条件下对金刚石膜进行的快速有效的抛光.讨论了金刚石膜抛光效果的影响因素及初步探讨了固态稀土Ce抛光金刚石膜的抛光机理.此外,还对抛光前后的金刚石膜以及反应产物进行了Raman光谱和X射线衍射谱(XRD)分析,从而初步得到了该方法抛光金刚石的抛光机理.研究表明:抛光速率和质量与抛光温度、时间和加载的压力有关;在680℃抛光2h就已出现抛光效果;经过700℃,2h,加载为1N抛光条件的处理后表面粗糙度(Ra)由原来的5.9762μm降低到2.0247μm;在750℃时获得了较高的抛光率,约35μm/h.
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