为模拟悬浮电位缺陷,设计了一种悬浮电位缺陷模型,并通过构建可产生符合IEC 60060-3标准要求的振荡型雷电冲击电压试验平台及相应的局部放电检测系统,对GIS中最常见的悬浮电位缺陷在振荡型雷电冲击电压下的局部放电特性进行研究,分析最大放电幅值、放电次数等随外加电压增加的变化规律。结果表明:在振荡型雷电冲击电压作用下,悬浮电位放电发生在外施电压的下降沿和上升沿处,随着外加电压的增加,放电最大幅值和放电次数均增加,且放电次数的增加幅度大于放电幅值的增加幅度。
To simulate floating potential defect, we designed a floating potential defect model. By setting up an experiment platform that can produce oscillating lightning impulse voltage that counld meet the re-quirements of IEC60060-3 and partial discharge measurement system, we studied the partial discharge characteristics of the common floating potential defect in SF6 gas under oscillating lightning impulse volt-age. The variation of discharge amplitude maximum and discharge number with the increase of voltage was studied. The results show that under the effect of oscillating lightning impulse voltage, the partial dis-charge of floating potential happen at the falling edge and rising edge of voltage. With the increase of voltage, the discharge amplitude maximum and discharge number increase, and the increase extent of the discharge number is greater than that of the discharge amplitude.
参考文献
[1] | 舒印彪,张文亮.特高压输电若干关键技术研究[J].中国电机工程学报,2007(31):1-6. |
[2] | 邱毓昌. GIS装置及其绝缘技术[M]. 西安:西安交通大学出版社,2007.,2007. |
[3] | 中国电力企业联合会统计信息部 . 全国电力工业生产简况[J].中国电力,2005,38(12):99-101.,2005. |
[4] | 汪沨,邱毓昌,张乔根.六氟化硫混合气体绝缘的发展动向[J].绝缘材料,2002(05):31-34. |
[5] | 梁方建,王钰,王志龙,贾晓静.六氟化硫气体在电力设备中的应用现状及问题[J].绝缘材料,2010(03):43-46. |
[6] | 杜晓平,李涛,李景华,牛庆松.气体绝缘组合电器(GIS)事故原因分析及建议[J].绝缘材料,2009(03):67-68,72. |
[7] | 严璋,朱德恒. 高电压绝缘技术[M]. 第二版,北京:中国电力出版社,2007.,2007. |
[8] | IEC60060-3:2006, High Voltage Test Techniques Part 3:Def-initions and Requirements for On-site Tests[S].,2006. |
[9] | GB/T 16927.3-2010,高电压试验技术第3部分现场试验的定义和要求[S].,2010. |
[10] | Li J H, Zhang L, Liang J F, et al . Partial Discharge Char-acteristics over SF6/Epoxy Interfaces under Impulse Voltage[J].IEEE Transactions on Dielectrics and Electrical Insula-tion,2013,20(6):2158-2164.,2013. |
[11] | Zhao X F, Yao X, Guo Z F, et al . Characteristics and De-velopment Mechanisms of Partial Discharge in SF6 Gas un-der Impulse Voltages[J].IEEE Transactions on Plasma Sci-ence,2011,39(2):668-674.,2011. |
[12] | Schichler U, Koltunowicz W, Endo F, et al . Risk Assess-ment on Defects in GIS Based on PD Diagnostics[J].IEEE Transactions on Dielectrics and Electrical Insulation,2013,20(6):2165-2172.,2013. |
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