c轴取向SiC衬底MgB_2超导厚膜的制备及性质

低温物理学报 , 2010, 32(1): 12-15.

c轴取向SiC衬底MgB_2超导厚膜的制备及性质

孟胜 ^1, , 张从尧 ^2, , 冯庆荣 ^3,

1.北京大学物理学院,北京,100871

2.北京大学物理学院,北京,100871

3.北京大学物理学院,北京,100871

基金项目: 国家自然科学基金(50572001) 科技部科研项目(2006CB601004) 教育部优秀本科生基础科研基金(J0630311)

关键词：混合物理化学气相沉积法 , MgB_2超导厚膜 , R～T曲线 , M～T曲线 , M～H曲线 , SEM图

THE STUDY OF SIC SUBSTRATE MgB_2 THICK FILMS GREW ALONG c AXIS

MENG Sheng ^1, , ZHANG Cong-rao ^2, , FENG Qing-rong ^3,

1.北京大学物理学院,北京,100871

2.北京大学物理学院,北京,100871

3.北京大学物理学院,北京,100871

Keywords： HPCVD , MgB_2 , Superconducting thick film , R～T curve , M～T curve , M～H curve

通过混合物理化学气相沉积法(Hybrid Physical-chemical Vapor Deposition,简称HPCVD),我们在SiC衬底上制备出了c取向8μm厚的MgB_2超导厚膜.电性质测量表明其起始超导转变温度是41.4K,转变宽度为0.5K,剩余电阻比率RRR～7.磁性质测量表明5K和零场下样品的临界电流密度达到了1.7×10~5A/cm~2.

We have fabricated MgB_2 thick films on SiC substrate grew along c axis by using hybrid physical-chemical vapor deposition (HPCVD) technique. The thickness was 8μm. Electric measurement showed that the T_c (onset) was 41. 4K, and the transition width was 0. 5K, the residual resistance ratio (RRR) was near 7. Magnetic measurement showed that the critical current density was 1. 7×10~6A/cm~2 at 5K in a self field.

参考文献

[1]	Fen Li;Tao Guo;Kaicheng Zhang .Thick polycrystalline MgB_2 film on Cu substrate by hybrid physical-chemical vapour deposition[J].Superconductor Science & Technology,2006(11):1196-1199.
[2]	Fen Li;Tao Guo;Kaicheng Zhang .Properties of MgB_2 thick film on silicon carbide substrate[J].Superconductor Science & Technology,2006(10):1073-1075.

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