采用常压化学气相淀积（ＡＰＣＶＤ）工艺在１０００～１４００℃温度范围内的（１００）Ｓｉ衬底上进行了β－ＳｉＣ薄膜的异质外延生长．实验结果表明，随着淀积温度的升高，外延层由多晶硅向β－ＳｉＣ单晶转变，结晶情况变好;但同时单晶生长速率却反而有所下降．
β-SiC thin films were heteroepitaxially grown on (100)Si substrates at a temperaturerange from 1000 to 1400℃ by atmospheric pressure chemical vapor deposition (APCVD) process.Experimental results show that the epitaxial layers change from polycrystalline silicon into singlecrystal β-SiC state with the deposition temperature s increasing, but the growth rates of singlecrystal films decrease inversely.
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