采用直流磁控反应溅射技术制备氧化钽薄膜,重点研究了溅射气体中Ar:O2比例和退火温度对样品的结构.成份和介电性能的影响.XRD、XPS和介电谱分析表明:Ar:O2比例对薄膜的结晶性能和薄膜中O/Ta原子比有较大影响,但对薄膜的介电性能没有明显的影响.900℃退火后,XRD谱中出现明显的β-Ta2O5(001)和(200)衍射峰;介电损耗谱表明介质的损耗是由微弱的电导产生的,漏电电流在损耗中占主导地位.
参考文献
| [1] | Muller D A;Sorsch T;Moccio S et al.The Electronic Structure at the Atomic Scale of Ultra-thin Gate Oxides[J].Nature,1999,399:758. |
| [2] | Tang SP.;Seabaugh A.;King-Smith D.;Wallace RM. .Evaluating the minimum thickness of gate oxide on silicon using first-principles method[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1998(1/4):137-142. |
| [3] | Neaton B;Muller D A;Ashcroft N W .Electronic Properties of the Si/SiO2 Interface From First Prineiples[J].Physical Review Letters,2000,85:1298-1301. |
| [4] | Koon-Yiu Tse;John Robertson .Control of Schottky Barrier Heights on High-k Gate Dielectrics for Future Complementary Metal-oxide Semiconducter Device[J].Physical Review Letters,2007,99:086805. |
| [5] | Maeng WJ;Kim H .Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics[J].Applied physics letters,2007(9):92901-1-92901-3-0. |
| [6] | Atanasseva E;Paskaleva A .Challenges ofTa205 as High-k Dielectric for Nanoscale DRAMs[J].Microelectronics Reliability,2007,47:913-923. |
| [7] | K. J. Hubbard;D. G. Schlom .Thermodynamic stability of binary oxides in contact with silicon[J].Journal of Materials Research,1996(11):2757-2776. |
| [8] | Chih-Tsung Tsai;Ting-Chang Chang;Po-Tsun Liu;Po-Yu Yang;Yu-Chieh Kuo;Kon-Tsu Kin;Pei-Lin Chang;Fon-Shan Huang .Low-temperature method for enhancing sputter-deposited HfO_(2) films with complete oxidization[J].Applied physics letters,2007(1):012109-1-012109-3-0. |
| [9] | Jun-Ying Zhang;Vincent Dusastre;Ian W. Boyd .Characterisation of ultraviolet annealed tantalum oxide films deposited by photo-CVD using 172 nm excimer lamp[J].Materials science in semiconductor processing,2001(1/3):313-317. |
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