采用水热法制备大量高长径比的Sb2Se3纳米带.十六烷基三甲基溴化铵(CTAB)作为形貌控制剂在纳米带的形成过程中起了至关重要的作用,借助X 射线粉末衍射(XRD)仪、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和高分辨透射电镜(HRTEM)等对所得产物进行系统表征.结果表明,所制备出的Sb2Se3纳米带是沿[001]晶面方向生长的,带的宽度在1 μm以内,厚度有100 nm左右,长度可达几十个微米.对Sb2Se3纳米带的生长机制和光学性质进行了初步的讨论和研究.
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