采用热蒸发法制备了单晶Sn掺杂ZnO纳米带,其中Sn的掺杂含量约为5%(原子分数).X射线衍射(XRD)结果表明Sn掺杂ZnO纳米带为单相纤锌矿结构.X射线光电子能谱(XPS)表明样品中Sn的价态为4+.样品的室温光致发光谱(PL)在445.8nm处存在较强的蓝光发射峰,对其发光机制进行了分析.
参考文献
| [1] | Cao H.;Zhang DZ.;Chang SH.;Ho ST.;Seelig EW.;Liu X.;Chang RPH.;Xu JY. .Spatial confinement of laser light in active random media[J].Physical review letters,2000(24):5584-5587. |
| [2] | Saito N;Haneda H;Sekiguchi T et al.[J].Advanced Materials,2002,14(06):418-420. |
| [3] | Yasemin C;Saliha I et al.[J].Spectrochimiea Acta Part A,2007,67:1113-1119. |
| [4] | Holmelund E.;Schou J.;Tougaard S.;Larsen NB. .Pure and Sn-doped ZnO films produced by pulsed laser deposition[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(0):467-471. |
| [5] | Vaezi M R;Sadrnezhaad S K .[J].Materials & Design,2007,28:1065-1070. |
| [6] | Bougrine A.;El Hichou A.;Addou M.;Ebothe J.;Kachouane A.;Troyon M. .Structural, optical and cathodoluminescence characteristics of undoped and tin-doped ZnO thin films prepared by spray pyrolysis[J].Materials Chemistry and Physics,2003(2):438-445. |
| [7] | Seu Y L;Pang L et al.[J].Journal of Physics D:Applied Physics,2004,37:2274-2282. |
| [8] | Seung Y B;Chan W N et al.[J].Journal of Physical Chemistry B,2005,109:2526-2531. |
| [9] | 陈红升,齐俊杰,黄运华,廖庆亮,张跃.Sn掺杂ZnO半导体纳米带的制备、结构和性能[J].物理化学学报,2007(01):55-58. |
| [10] | 孟慧,王聪.Zn掺杂SnO2纳米线的制备与结构表征[J].半导体学报,2007(z1):267-270. |
| [11] | Fu Z X;Guo C X et al.[J].Chinese Physics Letters,1998,15(06):457-459. |
| [12] | 林碧霞,傅竹西,贾云波,廖桂红.溅射方法生长的氧化锌薄膜的阴极射线和光致发光特性[J].发光学报,2001(02):167-171. |
| [13] | 徐彭寿,孙玉明,施朝淑,徐法强,潘海斌.ZnO及其缺陷的电子结构[J].中国科学A辑,2001(04):358-365. |
| [14] | Lin B X;Fu Z X et al.[J].Applied Physics Letters,2001,79:943-945. |
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