低In电解液电沉积制备CuInSe2吸收层

功能材料, 2012, 43(z1): 94-100.

低In电解液电沉积制备CuInSe2吸收层

胡飞 ^1, , 陈镜昌 ^2, , 付梦乾 ^3, , 文思逸 ^4, , 胡跃辉 ^5,

1.景德镇陶瓷学院材料科学与工程学院,江西省先进陶瓷材料重点实验室,江西景德镇333001

2.香港理工大学工业系统工程学系,中国香港999077

3.景德镇陶瓷学院材料科学与工程学院,江西省先进陶瓷材料重点实验室,江西景德镇333001

4.景德镇陶瓷学院材料科学与工程学院,江西省先进陶瓷材料重点实验室,江西景德镇333001

5.景德镇陶瓷学院材料科学与工程学院,江西省先进陶瓷材料重点实验室,江西景德镇333001

基金项目: 江西省自然科学基金资助项目(2010GQC0108) 江西省青年科学家(井冈之星)培养对象计划资助项目(20112BCB23022) 留学人员科技活动项目择优资助项目([2011]474) 江西省教育厅科技资助项目(GJJ12496)

关键词：线性电位扫描 , 铜铟硒(CIS)薄膜 , 分段电沉积 , 柠檬酸钠

The electrodeposition of CuInSe2 adsorb layers in low In ions electrolytes

通过线性电位扫描分析了低In电解液中的阴极电化学反应,结果表明柠檬酸钠可以降低Cu2+的活性,而H2SeO3的加入可导致阴极上Se元素与Cu+和In3+发生复杂的协同反应.低In电解液中恒电位沉积的薄膜与CIS的化学计量比相差较大,分段电位的恒电位沉积得到的薄膜更接近于CuInSe2(CIS)化学计量比.薄膜在N2气氛上退火处理,得到了黄铜矿结构CIS薄膜,禁带宽度为1.06eV.

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