采用新型ｓｏｌ－ｇｅｌ技术在 Ｐｔ／Ｔｉ／ＳiO2/Si基片上制备出了厚度为 ２～６０μｍ的ＰＺＴ铁 电厚膜材料；研究了ＰＺＴ厚膜的结构及其介电、铁电性能．ＸＲＤ谱分析显示，ＰＺＴ厚膜 呈现出纯钙钛矿相结构，无焦绿石相存在．ＳＥＭ电镜照片显示，ＰＺＴ膜厚均匀一致，无裂 纹、高致密．厚度为５０μｍ的ＰＺＴ厚膜的介电常数为８６０，介电损耗为０.０３，剩余极化强度 是２５μＣ／ｃｍ２．矫顽场是４０ｋＶ／ｃｍ.
Lead zirconate titanate (Pb(Zr0.53Ti0.47)O3, PZT) ferroelectric films 2-60μm in thickness were successfully fabricated on Pt-coated oxidized
Si substrates(Pt/Ti/SiO2/Si) by a new sol gel processing. The microstructure and morphology of the prepared PZT thick films were
investigated via X-ray diffractometry and scanning electron microscopy techniques. X-ray diffraction patterns taken on these films show
single-phase perovskite-type structure, and no pyrochlore phase exists in thick films, and SEM micrographs suggest that the PZT thick films
are of high density, crack-free, and uniformity. Dielectric constant of 860, loss tangent of 0.03, remanent polarization of 25μC/cm2, a coercive field of 40kV/cm were measured on 50μm thick films.
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