过去，鲜有Zr掺杂氧化铟锡（ITO）薄膜电学稳定性及耐蚀性的研究报道。采用磁控溅射法制备了ITO薄膜和Zr掺杂ITO薄膜（ITO：Zr），研究了2种薄膜的微观结构、光电性能及其在3种模拟腐蚀环境（酸性、海洋、工业）腐蚀液中的电学稳定性及耐腐蚀性。结果表明：Zr的掺杂导致了ITO薄膜择优取向向（400）晶面转变，ITO：Zr薄膜比ITO薄膜具有更好的光电性能；2种薄膜在3种环境介质中都能发生自钝化，在工业环境中具有最好的耐腐蚀性能；ITO：Zr薄膜比ITO薄膜具有更好的电学稳定性和耐腐蚀性。
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