利用射频反应溅射法在玻璃衬底上在Ar和O2气氛中从Cd-In合金靶上制备出了CdIn2O4薄膜.实验结果表明退火处理对CdIn2O4薄膜的光电性质有重要的影响.退火处理进一步降低了CdIn2O4膜的电阻率,在可见光区域内该膜的最高光透射率超过了90%.研究还发现CdIn2O4膜电阻在CO气氛中十分敏感的发生变化,并且提高温度和在膜上生长不连续的Pt粒子可进一步增强气敏特性.实验研究还表明CdIn2O4膜气敏传感器响应时间比通用的气敏元件快得多.
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