AlInN三元合金是优良的Ⅲ-Ⅴ族氮化物半导体材料,具有优良的光学和电学性能,在光电子器件应用方面具有广阔的应用前景.详细评述了近年来AlInN薄膜材料在生长技术、晶体结构、表面形貌、热学特性、光电特性等方面的研究,为AlInN三元合金在光电方面的基础和应用研究提供了重要参考.
AlInN is one of Ⅲ-Ⅴ nitride semiconductor materials with excellent optical and electrical properties,and has vast potential in photoelectronic device application. The recent studies on the growth methods, crystal structures, surface morphologies, thermal characteristics, and optoelectronic properties of AlInN films were reviewed in detail in this article, which is promising for exploring applicable Ⅲ-Ⅴ nitride semiconductor materials in basic and/or applied optics, electronics, and opto-electronics.
参考文献
| [1] | Takao Fujimori;Hitoshi Imai;Akihiro Wakahara;Hiroshi Okada;Akira Yoshida;Tomohiko Shibata;Mitsuhiro Tanaka .Growth and characterization of AlInN on AlN template[J].Journal of Crystal Growth,2004(1/4):381-385. |
| [2] | Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta et al.Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy[J].Journal of Crystal Growth,1998,195:309. |
| [3] | Rüdiger Quay.Gallium nitride electronics[M].Beilin:Springer-Verlag,2008:3. |
| [4] | Kuzmik J .Power electronics on InAlN/(In)GaN:Prospect for a record performance[J].IEEE Electron Device Letters,2001,22:510. |
| [5] | Gonschorek M;Carlin J F;Feltin E et al.Two-dimensional electron gas density in Al_(1-x) In_x N/AlN/GaN heterostructures,0.03≤x≤0.23[J].Journal of Applied Physics,2008,103:093714. |
| [6] | Lorenz K;Franco N;Alves E et al.Relaxation of compressively strained AlInN on GaN[J].Journal of Crystal Growth,2008,310:4058. |
| [7] | Gonschorek M;Simeonov D;Carlin J F et al.Temperature mapping of Al_(0.85) In_(0.15) N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies[J].European Journal of Applied Physiology,2009,47:30301. |
| [8] | Walukiewicz W;Li SX;Wu J;Yu KM;Ager JW;Haller EE;Lu H;Schaff WJ .Optical properties and electronic structure of InN and In-rich group III-nitride alloys[J].Journal of Crystal Growth,2004(1):119-127. |
| [9] | Carlin JF;Zellweger C;Dorsaz J;Nicolay S;Christmann G;Feltin E;Butte R;Grandjean N .Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials[J].Physica status solidi, B. Basic research,2005(11):2326-2344. |
| [10] | Lukitsch M J;Danylyuk Y V;Naik V M et al.Optical and electrical properties of Al_(1-x) In_xN films grown by plasma source molecular-beam epitaxy[J].Applied Physics Letters,2001,79:632. |
| [11] | Seppanen T;Persson POA;Hultman L;Birch J;Radnoczi GZ .Magnetron sputter epitaxy of wurtzite Al1-xInxN(0.1 < x < 0.9) by dual reactive dc magnetron sputter deposition[J].Journal of Applied Physics,2005(8):3503-1-3503-9-0. |
| [12] | Guo QX;Okazaki Y;Kume Y;Tanaka T;Nishio M;Ogawa H .Reactive sputter deposition of AlInN thin films[J].Journal of Crystal Growth,2007(1):151-154. |
| [13] | Tung-Sheng Yeh;Jenn-Ming Wu;Wen-How Lan .Electrical Properties And Optical Bandgaps Of Alinn Films By Reactive Sputtering[J].Journal of Crystal Growth,2008(24):5308-5311. |
| [14] | Dong C J;Xu M;Chen Q Y et al.Growth of well-oriented Al_xIn_(1-x)N films by sputtering at low temperature[J].Journal of Alloys and Compounds,2009,479:812. |
| [15] | Seppanen T;Hultman L;Birch J;Beckers M;Kreissig U .Deviations from Vegard's rule in Al1-xInxN (0001) alloy thin films grown by magnetron sputter epitaxy[J].Journal of Applied Physics,2007(4):43519-1-43519-6-0. |
| [16] | The effect of AlN buffer layer on properties of Al_xIn_(1-x)N films on glass substrates[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2009(11):3204-3207. |
| [17] | Schenk H P D;Nemozl M;Korytov M et al.AlInN optical confinement layers for edge emitting group Ⅲ-nitride laser structures[J].Physical Status Solidi C,2009,6:S897. |
| [18] | Schenk H P D;Nemoz M;Korytov M et al.Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN[J].Applied Physics Letters,2008,93:081116. |
| [19] | Lin Zhou;David J. Smith;Martha R. McCartney;D. S. Katzer;D. F. Storm .Observation of vertical honeycomb structure in InAlN/GaN heterostructures due to lateral phase separation[J].Applied physics letters,2007(8):081917-1-081917-3-0. |
| [20] | Recombination dynamics of localized excitons in Al_(1-x)In_(x)N epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy[J].Journal of Applied Physics,2003(4):2449-2453. |
| [21] | Senda S;Jiang H;Egawa T .AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition[J].Applied Physics Letters,2008,92:203507. |
| [22] | Gadanecz A;Biasing J;Dadgar A et al.Thermal stability of metal organic vapor phase epitaxy grown AlInN[J].Applied Physics Letters,2007,90:221906. |
| [23] | Wang K;Martin RW;Amabile D;Edwards PR;Hernandez S;Nogales E;O'Donnell KP;Lorenz K;Alves E;Matias V .Optical energies of AlInN epilayers[J].Journal of Applied Physics,2008(7 Pt.1):73510-1-73510-3-0. |
| [24] | Peng T;Piprek J;Qiu G;Olowolafe JO;Unruh KM;Swann CP;Schubert EF;UNIV DELAWARE DEPT ELECT ENGN NEWARK DE 19716.;UNIV DELAWARE DEPT PHYS & ASTRON NEWARK DE 19716.;BOSTON UNIV CTR PHOTON RES BOSTON MA 02215. .Band gap bowing and refractive index spectra of polycrystalline AlxIn1-xN films deposited by sputtering[J].Applied physics letters,1997(17):2439-2441. |
| [25] | Sepp(a)nen T;Hultman L;Birch J .248nm cathodoluminescence in Al_(1-x) In_x N(0001) thin films grown on la-tticematched Ti_(1-y) Zr_yN (111) seed layers by low temperature magnetron sputter epitaxy[J].Applied Physics Letters,2006,89:181928. |
| [26] | Jeganathan K;Shimizu M;Okumura H et al.Latticematched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy[J].Journal of Crystal Growth,2007,304:342. |
| [27] | Hiroki M;Yokoyama H;Watanabe N;Kobayashi T .High-quality InAlN/GaN hetero structures grown by metal-organic vapor phase epitaxy[J].Superlattices and microstructures,2006(4/6):214-218. |
| [28] | Behmenburg H;Rahimzadeh Khoshroo L;Eickelkamp M et al.Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties[J].Physical Status Solidi C,2009,6:S1041. |
| [29] | Xie J;Ni X;Wu M et al.High electron mobility in nearly lattice-matched AlInN/AlN/GaN heterostructure field effect transistors[J].Applied Physics Letters,2007,91:132116. |
| [30] | Lin Zhou;David A. Cullen;David J. Smith;Martha R. McCartney;Anas Mouti;M. Gonschorek;E. Feltin;J. F. Carlin;N. Grandjean .Polarization field mapping of Al_(0.85)In_(0.15)N/AlN/GaN heterostructure[J].Applied physics letters,2009(12):121909-1-121909-3-0. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%