欢迎登录材料期刊网

材料期刊网

高级检索

以正硅酸乙酯为原料,采用溶胶-凝胶法、旋转涂胶和超临界干燥工艺在硅片上制备了纳米多孔SiO2薄膜.用近线性生长模型和分形生长模型研究了SiO2溶胶的粘度-时间曲线,确定了SiO2溶胶的结构演变过程.适合旋转涂胶的SiO2溶胶的粘度为9 mPa·s~15 mPa·s;旋转涂胶时SiO2溶胶的粒子尺寸与其浓度密切相关.该SiO2薄膜具有三维网络结构,表面均匀平整,SiO2微粒直径为10nm~20 nm.SiO2薄膜的厚度为400nm~1 000nm;折射率为1.09~1.24;介电常数为1.5~2.5.

参考文献

[1] Lee W W;Ho P S .Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications[J].MRS Bulletin,1997,22(10):19-23.
[2] Hyun S.H.;Kim J.J. .Synthesis and Characterization of Low-Dielectric Silica Aerogel Films[J].Journal of the American Ceramic Society,2000(3):533-540.
[3] A. Jain;S. Rogojevic;S. Ponoth;N. Agarwal;I. Matthew;W. N. Gill;P. Persans;M. Tomozawa;J. L. Plawsky;E. Simonyi .Porous silica materials as low-k dielectrics for electronic and optical interconnects[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(0):513-522.
[4] 阮刚,肖夏,朱兆旻.低介电常数(low-k)介质在ULSI中的应用前景[J].电子学报,2000(11):84-87,95.
[5] 吴广明,鲁鸿雁,王珏,沈军,周斌,张勤远,邓忠生.SiO2气凝胶薄膜常压制备与强化研究[J].物理学报,2002(01):104-110.
[6] Jo MH.;Kim DJ.;Hyun SH.;Choi SY.;Paik JT.;Park HH. .SIO2 AEROGEL FILM AS A NOVEL INTERMETAL DIELECTRIC[J].Journal of Applied Physics,1997(3):1299-1304.
[7] Fardad M A;Yeatman E M;Dawnay E J C et al.Effect of H2O on Structure of Acid-Catalysed SiO2 Sol-Gel Films[J].Journal of Non-Crystalline Solids,1995,183:260-267.
[8] Edward J A Pope;Mackenzie J D .Theoretical Modeling of the Structure Evolution of Gels[J].Journal of NON-CRYSTALLINE SOLIDS,1988,101:198-212.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%