采用CVD法成功合成了高质量单晶In2 Ge2 O7纳米带,采用高分辨透射电子显微镜(HRTEM)图像以及X射线衍射(XRD),能谱元素分布图像等对产物进行了表征.结果表明,生长的纳米带长几十微米、厚度50 nm,几乎没有缺陷且In,Ge,O元素分布均匀.此外,基于热力学原理对单晶纳米带的生长机制进行了讨论.
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