采用直流等离子体化学气相沉积技术,在高速钢、Si(100)和Si(111)基体上沉积TiN膜,并对膜的晶体结构、表面形貌、断口结构、显微硬度、氯含量等进行了测定和分析,部分样品进行了二次离子质谱(SIMS)、Auger谱(AES)和X光光电子谱(ESCA)等分析.试验表明:在不同基材上沉积的TiN膜,只要沉积参数相同,膜的结构和性能都相同.在沉积温度500℃左右,TiN膜的生长方式有一转变,即可能是由层生长转变为岛状生长.直流PCVD法生成的TiN膜,其N:Ti≈1:1,有强的(200)织构,膜与基体间有较宽的共混区,因而结合强度高和耐磨性好,适于用作耐磨镀层.
TiN films were deposited onto high speed steel, Si(100) and Si(111) substrates using D. C. PCVD method. The crystallographic structure, surfacemorphology, fracture cross section, microhardness and the chlorine content of thePCVD TiN films were studied. Part of the samples were analyzed using SIMS, AESand ESCA. Experimental results indicated that the structure and properties of theTiN films on different substrates were almost the same when the same depositionparameters were used. At about 500℃, the mode of the film growth undergoes achange probably from layer growth to island growth. The PCVD TiN films had aratio N/Ti of 1, and revealed strong (200) texture. A mixed region existed betweenthe films and the substrates. It could be concluded that PCVD TiN films show goodadherence and excellent wear resistant properties, and are suitable for anti-frictioncoating.
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