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利用磁过滤阴极电弧镀分别在硬质合金和高速钢基体上沉积厚度约2～3μm的TiN薄膜，并用MEVVA源离子注入装置对TiN薄膜注入金属离子V+和Nb+。应用北京同步辐射装置（BSRF）的同步辐射光源，采用掠入射X射线衍射（GIXRD）的方法对TiN薄膜表面离子注入层的微观结构进行了分析研究。结果表明：未经过离子注入的TiN薄膜均存在特定方向的择优取向，而较小剂量(1×10ˇ17ions/cm2)的离子注入可以使晶粒细化、择优取向减弱或改变；当离子注入的剂量达到5×10ˇ17ions/cm2时，TiN薄膜表面离子注入层被非晶化。结合透射电镜的研究结果，观察到TiN薄膜表面非晶层的厚度约为50～100nm，并简要地讨论了离子注入过程对微观结构的影响机制。

The synchrotron radiation grazing incident X-ray diffraction(GIXRD) method was employed to investigate the microstructure of the surface layer of TiN films, which had been deposited on the cemented carbide (WC-Co) and high speed steel (Fe-Cr), respectively, by Magnetron Filtration Arc Ion Plating, and then been implanted with V+ or Nb+ ions by MEVVA at different doses. The results showed that the original TiN film without being implanted with V+ or Nb+ ions both had a preferred orientation of specific direction depending on the substrate, while the grain size of TiN film implanted at smaller dosage (1×10ˇ17ions/cm2) had been fined and the preferred orientation had been weakened or changed. An 50～100nm (given by TEM) amorphous layer occurs in the implantation zone near the surface of TiN film, when the dosage of ion implantation reached 5×10ˇ17ions/cm2. The mechanism of ion implantation’s affection on TiN film was briefly discussed thereafter.