采用分步电化学沉积法,在FTO玻璃基底上成功制备出GaAs薄膜.采用高分辨X射线衍射仪(HRXRD)、场发射扫描电镜(FESEM)、紫外可见光光度计(UV-Vis)、荧光光度计(PL)对不同退火工艺下所制备的薄膜的晶体结构、形貌及光学性能进行表征.结果表明:GaAs薄膜为面心立方晶系,沿(111)方向择优生长.随着退火温度的升高,薄膜内颗粒逐渐增大,Ga与As原子量比发生变化,Eg值减小,光致发光峰为红外发射峰.同时对其形成机理进行了探讨.
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