用射频磁控溅射法在单晶Si基体上制备了硅钼薄膜,对薄膜进行真空退火处理以及高温氧化实验,借助SEM和X射线衍射仪（XRD）等仪器对退火前后的薄膜以及高温氧化后的薄膜进行了分析。结果表明沉积态的硅钼薄膜为非晶态,高温真空退火使薄膜由非晶态转变为晶态,致密的复合氧化物是硅钼薄膜具有良好的抗氧化性能的主要原因。
Mo-Si thin film was deposited on single-crystal silicon（100） substrate by magnetron sputtering. The films were annealed in vacuum and high temperature oxidation test. The surface morphology and microstructure of the films after vacuum annealing and high temperature oxidation were analyzed by SEM and X-ray diffraction （XRD）. The results showed that at room-temperature, the Mo-Si thin film prepared by magnetron sputtering was amorphous. After vacuum annealing, it was changed into crystalline. The Mo-Si thin film exhibited excellent antioxidation property because of the compact oxidate layer generated outside the substrate.
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